TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix

机译：TEM研究ZnSe基质中CdSe分数单层中的自组织现象

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The main stages of the intrinsic morphology transformation of MBE and MEE grown CdSe/ZnSe fractional monolayers (FMs) have been investigated by transmission electron microscopy (TEM). The FM morphology evolution is studied as a function of the FM nominal thickness in the range of 0.1-2.8 ML. Emergence of self-organized extended (15-30 nm) CdSe-based pseudomorphic islands is observed in the plan-view TEM images of FMs with a nominal thickness above 0.7 ML. A comparative analysis of the MEE and MBE grown structures has shown that in the case of MEE mode the FM morphology is more homogeneous.

机译：MBE和MEE生长的CdSe / ZnSe分数单层（FMs）的固有形态转变的主要阶段已通过透射电子显微镜（TEM）进行了研究。根据FM标称厚度在0.1-2.8 ML范围内的函数研究FM形态演变。在标称厚度超过0.7 ML的FM的平面TEM图像中观察到自组织的扩展的（15-30 nm）基于CdSe的假晶岛的出现。对MEE和MBE生长结构的比较分析表明，在MEE模式下，FM形态更均匀。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.76-79|共4页
会议地点 Strasbourg(FR)
作者
A. Sitnikova; S. Sorokin; I. Sedova; T. Shubina; A. Toropov; S. Ivanov; L. Falk; M. Willander;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
CdSe/ZnSe heterostructure; Fractional monolayer; Transmission electron microscopy; Molecular beam epitaxy; Migration enhanced epitaxy;

机译：CdSe / ZnSe异质结构；分数单层透射电子显微镜；分子束外延；迁移增强了外延;

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专利

1. Cathodoluminescence and TEM studies of MBE-grown CdSe submonolayers in ZnSe matrix, cladded by ZnSSe, ZnSe and ZnMgSe [J] . P.A. Trubenko, V.I. Kozlovsky, V.V. Roddatis Journal of Crystal Growth . 2000,第期

机译：ZnSe基体中由MBE生长的CdSe亚单层的阴极发光和TEM研究，掺有ZnSSe，ZnSe和ZnMgSe
2. Cathodoluminescence and TEM studies of MBE-grown CdSe submonolayers in ZnSe matrix, cladded by ZnSSe, ZnSe and ZnMgSe [J] . P.A. Trubenko, V.I. Kozlovsky, V.V. Roddatis Journal of Crystal Growth . 2000,第期

机译：ZnSe基体中由MBE生长的CdSe亚单层的阴极发光和TEM研究，掺有ZnSSe，ZnSe和ZnMgSe
3. Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe [J] . S. Sorokin, T. Shubina, A. Toropov Journal of Crystal Growth . 1999,第MAY期

机译：ZnSe中CdSe分数单层的迁移增强外延（MEE）与分子束外延（MBE）生长动力学的特殊性
4. TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix [C] . A. Sitnikova, S. Sorokin, I. Sedova, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：ZnSE矩阵中CDSE分数单层中的自组织现象的TEM研究
5. Development of wide bandgap II--VI materials for visible lasers and light emitting diodes. A. Bipolar doping and electroluminescence of ZnMgCdSe structures. B. Hexagonal ZnSe-based structures [D] . Lin, Wei-Cheng Wilson 2000

机译：开发用于可见光激光器和发光二极管的宽带隙II-VI材料。 A. ZnMgCdSe结构的双极掺杂和电致发光。 B.六角形ZnSe基结构
6. Determining the core corona and total size of CdSeS/ZnS quantum dots by SEC/QELS and TEM [O] . Leena Pitkänen, André M. Striegel -1

机译：通过SEC / QELS和TEM确定CdSeS / ZnS量子点的核电晕和总大小
7. TEM characterization of self-organized CdSe/ZnSe quantum dots [O] . H. Kirmse, R. Schneider, K. Scheerschmidt, 2015

机译：自组织Cdse / Znse量子点的TEm表征

TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix

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