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Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices

机译：CdSe / ZnSe分数单层超晶格中载流子输运现象的光学研究

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Optical properties of short-period CdSe/ZnSe fractional monolayer (ML) superlattices (Sls) with nominal thickness of CdSe layers in the range of 0.1-2 ML have been studied, focusing on vertical carrier transport along the growth axis. Specially designed structures have been grown by molecular beam epitaxy, containing either a single SL or a SL with an enlarged ZnCdSe quantum well located far away from the region where carriers are generated by photo-excitation. Extremely efficient vertical transport is observed for a CdSe layer thickness less than 0.7 ML, confirming formation of a perfect miniband of extended states. Localized electronic levels appear in the SL with CdSe layers thicker than 0.7 ML. However, at layer thicknesses up to 1-1.5 ML the extended states dominate the light-absorption process and the transport properties of the SL.
机译：研究了短周期CdSe / ZnSe分数单层（ML）超晶格（Sls）的光学特性，标称CdSe层厚度在0.1-2 ML范围内，重点是沿生长轴的垂直载流子传输。通过分子束外延生长了经过特殊设计的结构，该结构包含单个SL或具有扩大的ZnCdSe量子阱的SL，其位置远离光激发产生载流子的区域。对于厚度小于0.7 ML的CdSe层，观察到非常有效的垂直传输，这证实了形成了一个完美的扩展态微带。 SL中的CdSe层厚度大于0.7 ML时出现局部电子水平。然而，在高达1-1.5 ML的层厚度下，扩展态支配了SL的光吸收过程和传输特性。

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