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首页> 外文会议>Thin films epitaxial growth and nanostructures >Structural properties of Ge nano-crystals embedded in SiO_2 films from X-ray diffraction and Raman spectroscopy
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Structural properties of Ge nano-crystals embedded in SiO_2 films from X-ray diffraction and Raman spectroscopy

机译：X射线衍射和拉曼光谱分析嵌入SiO_2薄膜中的Ge纳米晶体的结构特性

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摘要

SiO_2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique. The films were studied by means of X-ray diffraction (XRD) and Raman spectroscopy. XRD studies revealed diamond structure of Ge particles in the films grown at temperatures higher than 500 deg C. The dependence of the average size of Ge nanocrystals, determined by fitting the X-ray spectra (13-63 A), on the substrate temperature, r.f.-power and the fraction of semiconductor in the taget was determined. For higher-temperature grown films containing crystalline Ge particles, a pronounced peak due to confined optical phonons was observed in Raman spectra, while for those grown at lower temperature, there is just a broad band seen below 300 cm~(-1). A theoretical model is applied to describe the contribution of optical phonons confined in small Ge spheres.
机译：使用射频磁控溅射技术生长了包含Ge小颗粒的SiO_2膜。通过X射线衍射（XRD）和拉曼光谱研究膜。 XRD研究表明，在高于500摄氏度的温度下生长的薄膜中，Ge颗粒的金刚石结构。Ge纳米晶体的平均尺寸（通过X射线光谱（13-63 A）拟合而确定）对衬底温度的依赖性，确定射频功率和标签中半导体的比例。对于含有晶体Ge颗粒的高温生长薄膜，在拉曼光谱中观察到了由受限的光子引起的明显峰，而对于在较低温度下生长的薄膜，在300 cm〜（-1）以下仅出现了一个宽带。应用理论模型来描述局限在小锗球中的光子的贡献。

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