A RADIATION TOLERANT 0.6 μm CMOS TECHNOLOGY

机译：耐辐射0.6μmCMOS技术

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Modifications of the standard fabrication techniques of the 0.6 μm CMOS technology lead to a radiation tolerant process in terms of immunity to total dose effects (up to 500 Gy) and to latchup under heavy ions (LET up to 100 MeV/(mg/cm~2). In this paper, the process development and the evolution of device parameters as a function of total dose are presented.

机译：对0.6μmCMOS技术的标准制造技术的修改导致了对总剂量效应（高达500 Gy）的免疫力和在重离子下的闩锁（LET高达100 MeV /（mg / cm〜 2）。本文介绍了工艺发展和设备参数随总剂量的变化。

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来源
《Third European conference on radiation and its effects on components and systems》|1995年|125-130|共6页
会议地点 Arcachon(FR);Arcachon(FR)
作者
V. Lasserre; T. Corbiere; B. Thomas; K. Roedde;
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作者单位

MATRA MHS, La Chantrerie, Route de Gachet, CP 3008, 44087 NANTES Cedex 03, France;

MATRA MHS, La Chantrerie, Route de Gachet, CP 3008, 44087 NANTES Cedex 03, France;

MATRA MHS, La Chantrerie, Route de Gachet, CP 3008, 44087 NANTES Cedex 03, France;

MATRA MHS, La Chantrerie, Route de Gachet, CP 3008, 44087 NANTES Cedex 03, France;

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原文格式 PDF
正文语种 eng
中图分类辐射防护;
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专利

1. Radiation tolerant RF-LDMOS transistors, integrated into a 0.25 μm SiGe-BICMOS technology [J] . Sorge R., Schmidt J., Reimer F., Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第APRa21期

机译：集成到0.25μmSiGe-BICMOS技术中的耐辐射RF-LDMOS晶体管
2. Radiation tolerant RF-LDMOS transistors, integrated into a 0.25 μm SiGe-BICMOS technology [J] . Sorge R., Schmidt J., Reimer F., Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第Apra21期

机译：辐射耐受RF-LDMOS晶体管，集成到0.25μm的SiGe-Bicmos技术中
3. Radiation and High-Voltage Tolerant Space CAN Driver in Standard Low-Voltage 3.3-V CMOS Technology [J] . R. J. E. Jansen, S. Lindner, G. Furano, IEEE Transactions on Nuclear Science . 2017,第8期

机译：采用标准低压3.3V CMOS技术的辐射和耐高压空间CAN驱动器
4. Reliability behaviour of a radiation tolerant 0.6 UM CMOS technology [C] . J. C. Courrege, J. L. Venturin, F. Bezerra, Proceedings of the Third ESA electronic components conference(EECC'97) . 1997

机译：耐辐射的0.6 UM CMOS技术的可靠性行为
5. Radiation -tolerant design with 0.18-micron CMOS technology [D] . Chen, Li 2004

机译：采用0.18微米CMOS技术的耐辐射设计
6. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology [O] . Jose Luis Muñoz-Gamarra, Arantxa Uranga, Nuria Barniol 2016

机译：使用65 nm CMOS技术单片集成的CMOS-NEMS铜开关
7. The Selection of a radiation-tolerant DAC for the LHC (Part II: CMOS technology) [O] . Franco Peláez Francisco Javier, Lozano Rogado Jesús, Agapito Serrano Juan Andrés 2003

机译：LHC的耐辐射DAC的选择（第二部分：CMOS技术）

A RADIATION TOLERANT 0.6 μm CMOS TECHNOLOGY

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