MODELLING CMOS RADIATION TOLERANCE IN THE HIGH-DOSE RANGE (MODELISATION DE LA TOLERANCE DE COMPOSANTS CMOS POUR LES FORTES DOSES)

机译：在高剂量范围内建模CMOS辐射容限（在高剂量范围内建模CMOS组件的容限）

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This paper refines a "four-lane" physical model for CMOS devices, first published in 1994. The growth of threshold voltage as a function of radiation dose in a very wide range of Complementary Metal-Oxide-Semiconductor (CMOS) devices, all the way from low (kilorad) to very high (gigarad) doses. The parameters of four LANE-LIKE OR CORRIDOR-LIKE REGIONS on the growth curve diagram are extracted. The resulting FOUR-LANE CLASSIFICATION is useful in selecting CMOS technologies and offers a new terminology for describing the radiation tolerance of ICs and could form the basis of a "league table", used to assess the performance of "hardening laboratories" around the world.

机译：本文完善了CMOS器件的“四通道”物理模型，该模型于1994年首次发布。在非常广泛的互补金属氧化物半导体（CMOS）器件中，阈值电压随辐射剂量的变化而增长。从低（kilorad）到非常高（gigarad）的方式。提取生长曲线图上四个LANE-LIKE或CORRIDOR-LIKE区域的参数。由此产生的四车道分类对选择CMOS技术很有用，并提供了一种用于描述IC的辐射耐受性的新术语，并且可以构成“联盟表”的基础，用于评估全球“硬化实验室”的性能。

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《Third European conference on radiation and its effects on components and systems》|1995年|183-190|共8页
会议地点 Arcachon(FR);Arcachon(FR)
作者
Andrew Holmes-Siedle; Palle Christensen; Leonard Adams; Claudia-Christina Seifert;
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作者单位

Centre for Radiation Damage Studies, Brunei University of West London;

Riso National Labs, Roskilde, Denmark;

European Space Agency, ESTEC, The Netherlands;

Siemens KWU, Offenbach, Germany;

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原文格式 PDF
正文语种 eng
中图分类辐射防护;
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4. Modelling CMOS radiation tolerance in the high-dose range [C] . Holmes-Siedle, A., Christensen, . 1996

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MODELLING CMOS RADIATION TOLERANCE IN THE HIGH-DOSE RANGE (MODELISATION DE LA TOLERANCE DE COMPOSANTS CMOS POUR LES FORTES DOSES)

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