Symmetric Triangular-barrier Optoelectronic Switch(S-TOPS) for novel optoelectronic memory

机译：用于新型光电存储器的对称三角栅光电开关（S-TOPS）

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Novel optoelectronic memory characteristics of a Symmetric Triangular-barrier Optoelectronic Switch(S-TOPS) were successfully demonstrated. Teh S-TOPS memory is featured by a simple cell structure, optical write/erase as well as electrical, and a long storage time without supplying electrical, and a long storage time without supplying elelctrical power. We have confirmed that stored data can be held about 10 minutes without applied voltage. These features make S-TOPS attractive when they are applied to parallelly accessible optoelectronic memory arrays.

机译：成功地展示了对称三角栅光电开关（S-TOPS）的新型光电存储特性。 S-TOPS存储器的特点是单元结构简单，光学写入/擦除以及电存储，不提供电的存储时间长，不提供电的存储时间长。我们已经确认，不施加电压就可以保存大约10分钟的数据。这些特性将S-TOPS应用于并行访问的光电存储阵列时具有吸引力。

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《Third optoelectronics and communications conference : Technical digest》|1998年|p.36-37|共2页
会议地点 Chiba(JP);Chiba(JP)
作者
H.Sakata; Y.Nagao; Y.Matsushima;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch(S- TOPS) [J] . H Sakata, Y Nagao, Y Matsushima Journal of optics, A. Pure and applied optics: journal of the European Optical Society . 1999,第4期

机译：对称三角栅光电开关的光电存储特性（S-TOPS）
2. Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch(S- TOPS) [J] . H Sakata, Y Nagao, Y Matsushima Journal of optics, A. Pure and applied optics: journal of the European Optical Society . 1999,第4期

机译：对称三角栅光电开关的光电存储特性（S-TOPS）
3. Different types of optoelectronic bistabilities in resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS) [J] . Sakata H., Utaka K. Electronics Letters . 1995,第13期

机译：谐振隧道三角屏障光电开关（R-TOPS）中不同类型的光电双稳态
4. Symmetric Triangular-barrier Optoelectronic Switch(S-TOPS) for novel optoelectronic memory [C] . H.Sakata, Y.Nagao, Y.Matsushima Optoelectronics and communications conference . 1998

机译：用于新型光电存储器的对称三角形屏障光电开关（S-TOPS）
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A new switching parameter varying optoelectronic delayed feedback model with computer simulation [O] . Lingfeng Liu, Suoxia Miao, Mengfan Cheng, -1

机译：具有计算机仿真的新型开关参数变化光电延迟反馈模型
7. Switching Memory: An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions (Adv. Mater. 17/2015) [O] . Tan, Hongwei, Liu, Gang, Zhu, Xiaojian, 2015

机译：开关存储器：具有集成解调和运算功能的光电电阻开关存储器（adv.mater.17 / 2015）

Symmetric Triangular-barrier Optoelectronic Switch(S-TOPS) for novel optoelectronic memory

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