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首页> 外文会议>Thirty - first Symposium on State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI), Honolulu, Hawaii; October 17-22, 1999 >Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP applications
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Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP applications

机译：用于ULP应用的InP / InGaAs HBT和InAlAs / InGaAs HBT的比较

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摘要

The increased demand for portable electronics has lead to the need for higher performance and efficiency. Devices operating at less than 50 mu W of power are defined as ultra - low - power (ULP) devices. New progress has been achieved on InP / InGaAs HBT and InAlAs / InGaAs HBT optimized for ULP applications. fT values of 2.2 GHz, and fMAX values of 20 GHz have been obtained for HBTs operating at less than 40 mu W. Current gain is greater than 45 with the device operating at less than 20 mu A on a 2.5 x 5 mu m~2 device. These devices have been significantly improved over the previously reported MOCVD grown InP / InGaAs ULP HBT which has fMAX of 10 GHz operating in the ultra - low - power level. The improvements has been attributed to the reduction of base dopant diffussion associated with Zn doping.
机译：对便携式电子产品的需求增加导致对更高性能和效率的需求。功率小于50μW的设备被定义为超低功率（ULP）设备。针对ULP应用优化的InP / InGaAs HBT和InAlAs / InGaAs HBT取得了新进展。对于工作在小于40μW的HBT，已获得2.2 GHz的fT值和20 GHz的fMAX值。在2.5 x 5μm〜2的电流下，器件工作在小于20μA的电流增益大于45。设备。与先前报道的MOCVD生长的InP / InGaAs ULP HBT相比，这些器件得到了显着改进，后者以10 GHz的fMAX工作在超低功率水平。改善归因于减少了与锌掺杂有关的基本掺杂剂扩散。

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