We demonstrate the importance of identifying and reducing cavity losses in high Q cavities in order to obtain very low threshold currents with high slope efficiency in vertical cavity surface emitting lasers. As a result of removing the Si doping from the lower distributed Bragg reflectors, we report to our knowledge the lowest room temperature threshold current density yet achieved in a VCSEL of 98 A / cm~2, the highest differential slope efficiency for a sub - 100 mu A VCSEL of 60
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机译：我们证明了在高Q腔中识别和减少腔损耗的重要性，以便在垂直腔表面发射激光器中获得具有高斜率效率的非常低的阈值电流。由于从下部分布的布拉格反射器中去除了Si掺杂，我们向我们报告了在VCSEL为98 A / cm〜2时实现的最低室温阈值电流密度，这是低于100的最高差分斜率效率VCSEL为60
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