Properties of Semi-Insulating GaAs:Fe Grown by Hydride Vapour Phase Epitaxy

机译：氢化物气相外延生长的半绝缘GaAs：Fe的性质

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In this article we analyse GaAs grown by Hydride Vapour Phase Epitaxy (HVPE) and doped with four different iron concentrations between 4x10~(16) to 4.5 x 10~(20) cm~(-3). From temperature dependent I-V measurements we obtain that the resistivity of the lowest doped sample is the highest. We also quantified the activation energy. These results together with those of time - resolved photoluminescence measurements indicate that the sample with the lowest Fe concentration, EL2 may be dominant. From the analysis of the time-resolved photoluminescence measurements, the intrinsic EL2 concentration and the electron and hole capture cross sections of Fe in GaAs were estimated.

机译：在本文中，我们分析了由氢化物气相外延（HVPE）生长并掺杂了4x10〜（16）至4.5 x 10〜（20）cm〜（-3）之间四种不同铁浓度的GaAs。从与温度相关的IV测量中，我们可以得出最低掺杂样品的电阻率最高。我们还量化了活化能。这些结果与时间分辨的光致发光测量结果一起表明，具有最低Fe浓度的样品EL2可能是主要的。通过对时间分辨光致发光测量结果的分析，可以估算GaAs中本征EL2的浓度以及Fe的电子和空穴俘获截面。

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《Thirty - first Symposium on State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI), Honolulu, Hawaii; October 17-22, 1999》|1999年|p.15-19|共5页
会议地点 Honolulu HI(US);Honolulu HI(US)
作者
E.Rodriguez Messmer; D.Soderstrom; P.Hult; S.Marcinkevicius; S.Lourdudoss; D.C.Look;
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中图分类无线电电子学、电信技术;
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2. Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) [J] . Koukitu A., Kumagai Y. Journal of Physics. Condensed Matter . 2001,第32期

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3. Second harmonic generation of CO/sub 2/ laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy [J] . Becouarn L., Gerard B. Electronics Letters . 1998,第25期

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4. Properties of Semi-Insulating GaAs:Fe Grown by Hydride Vapour Phase Epitaxy [C] . E.Rodriguez Messmer, D.Soderstrom, P.Hult, Symposium on state-of-the-art program on compound semiconductors . 1999

机译：半绝缘GaAs的性质：氢化物气相外延生长
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Properties of Semi-Insulating GaAs:Fe Grown by Hydride Vapour Phase Epitaxy

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