Self-Aligned 0.2 - 0.6 mu m T-gate microwave FET's

机译：自对准0.2-0.6μmT栅极微波FET

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A new structure forming planar - doped barrier is employed to fabricate self - aligned T - gate FET's (SAT - FET's) with sub - micro gate length. The merits of the proposed structure include easy control in gate dimension, reduced parasitic series resistance, parasitic capacitance. Furthermore, enhanced conduction - and valence - band offsets overcome the inherent problem of a very small breakdown associated with traditional self - aligned gate FET's (SAG - FET's). More detailed device structure and processing procedures will be presented in the report.

机译：采用一种形成平面掺杂势垒的新结构来制造具有亚微栅极长度的自对准T栅极FET（SAT-FET）。所提出结构的优点包括易于控制栅极尺寸，减小寄生串联电阻，寄生电容。此外，增强的导带和价带偏移克服了与传统自对准栅极FET（SAG-FET）相关的很小击穿的固有问题。报告中将提供更详细的设备结构和处理程序。

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《Thirty - first Symposium on State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI), Honolulu, Hawaii; October 17-22, 1999》|1999年|p.232-237|共6页
会议地点 Honolulu HI(US);Honolulu HI(US)
作者
W.S.Lour; Y.M.Shih; G.Y.Lai; P.L.Cheng; H.R.Chen;
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中图分类无线电电子学、电信技术;
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4. Self-Aligned 0.2 - 0.6 mu m T-gate microwave FET's [C] . W.S.Lour, Y.M.Shih, G.Y.Lai, Symposium on state-of-the-art program on compound semiconductors . 1999

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Self-Aligned 0.2 - 0.6 mu m T-gate microwave FET's

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