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首页> 外文会议>Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing VI >Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics
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Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics

机译：II-VI材料中的共聚焦光致发光显微镜：退火和降解动力学

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Abstract: Confocal photoluminescence imaging is an important tool in the investigation of recombination in semiconductors and in the characterization of material growth. This characterization is particularly important for II-VI wide band-gap semiconductors where the potential for blue-green lasers is being explored currently. To achieve room-temperature cw operation of these lasers over the multi-thousand hours necessary for commercialization, extremely low defect densities are required. The confocal microscope is used in this work to image photoluminescence from II-VI materials to characterize the defect formation and propagation within the quantum well region of the material. This imaging approach permits the degradation to be monitored in real time and over a large area in samples with low defect densities. The additional advantages of this set-up over a conventional microscope are, of course, the higher lateral resolution and narrow depth of field associated with a confocal microscope. While considerable effort has been focused on the degradation in these II-VI semiconductors, we have recently observed that annealing can occur simultaneously in the same sample when the material is exposed to intense optical excitation. Images of annealing and degradation of a range of II-VI samples will be presented to highlight these observations. !13
机译：摘要：共聚焦光致发光成像是研究半导体复合和表征材料生长的重要工具。该特性对于II-VI宽带隙半导体尤其重要，目前正在研究蓝绿色激光器的潜力。为了在商业化所需的数千小时内实现这些激光器的室温连续工作，需要极低的缺陷密度。共聚焦显微镜用于这项工作，以成像II-VI材料的光致发光，以表征缺陷的形成和在材料的量子阱区内的传播。这种成像方法可以在缺陷密度低的样品中实时，大面积地实时监测降解情况。与常规显微镜相比，这种设置的其他优势当然是与共聚焦显微镜相关的更高的横向分辨率和更窄的景深。尽管已将大量精力集中在这些II-VI半导体的降解上，但我们最近观察到，当材料受到强烈的光激发时，同一样品中会同时发生退火。将显示一系列II-VI样品的退火和降解图像，以突出显示这些观察结果。 ！13

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