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首页> 外文会议>TMS(The Minerals, Metals amp; Materials Society) Annual Meeting and Symposium on Surfaces and Interfaces in Nanostructured Materials and Trends in LIGA, Miniaturization, and Nanoscale Materials; 20040314-20040318; Charlotte,NC; US >XRD, HRTEM AND FIB-SIMS STUDY OF INTERFACES IN TiN/Cu MULTILAYERED THIN FILMS
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XRD, HRTEM AND FIB-SIMS STUDY OF INTERFACES IN TiN/Cu MULTILAYERED THIN FILMS

机译：TiN / Cu多层薄膜界面的XRD，HRTEM和FIB-SIMS研究

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摘要

This paper reports on the characterization of the interfaces in TiN/Cu multilayered thin films. The films were deposited by dual ion beam sputtering with modulation periods (Λ) ranging from 5 to 50 nm. X-ray diffraction provided information on the global multilayer structure, revealing a [002]-out-of-plane texture. High Resolution Transmission Electron Microscopy showed the presence of several interfacial and growth defects, such as misfit dislocations and micro-twins, formed to relax the huge misfit (15.9%) between the two fcc lattices, and a cube-on-cube epitaxial growth, with semi-coherent interfaces. The presence of a growth front facetted morphology in Cu is revealed, leading to lateral interfacial roughness and fluctuations in the interplanar spacings. Ultimately, by Focused Ion Beam Secondary Ion Mass Spectrometry preliminary depth profiles were obtained with the aim to gain a comprehensive picture of the interfacial properties in terms of interface roughness and elemental distribution at the interfaces.
机译：本文报道了TiN / Cu多层薄膜界面的表征。通过双离子束溅射以5至50nm的调制周期（Λ）沉积膜。 X射线衍射提供了有关整体多层结构的信息，揭示了[002]面外纹理。高分辨率透射电子显微镜显示存在一些界面和生长缺陷，例如失配位错和微孪晶，它们的形成是为了缓和两个fcc晶格之间的巨大失配（15.9％），以及立方对立方外延生长，半连贯的接口。揭示了在铜中存在生长的前刻面形态，导致横向界面粗糙度和晶面间距的波动。最终，通过聚焦离子束二次离子质谱法获得了初步的深度剖面图，目的是获得关于界面性质的全面图像，包括界面粗糙度和界面处的元素分布。

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