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A Compact Hybrid Silicon/Electro-Optic Polymer Resonant Cavity Modulator Design

机译:紧凑的混合硅/光电聚合物谐振腔调制器设计

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The design and simulation of a novel resonant cavity optical modulator incorporating a hybrid silicon/electro-optic polymer slot waveguide structure is presented in this work. The device utilizes the electro-optic polymer in the cavity region to provide an active material for modulation and includes distributed Bragg reflectors in single mode silicon waveguide regions at each end of the cavity to create a narrow response peak at the resonant wavelength. Simulation results show that this electro-optic modulator design can simultaneously attain a large modulation depth, short device length and a low drive voltage, all of which are expected to be necessary for future high speed integrated optics devices. The high operating frequency and complex nature of the structure lead to a need for full 3D simulations in order to obtain accurate propagation characteristics, particularly concerning scattering losses. However, 3D simulations are very computationally expensive, especially during design optimization. Therefore, the periodicity of the device has been exploited to allow a cascade matrix approach to be employed to reduce the necessary computational resources required for accurate simulation of the propagation characteristics. The design and fabrication process have been chosen to allow for the majority of the fabrication to be completed before the electro-optic polymer is introduced into the process, which enables the use of well-established CMOS processing techniques, and should accelerate the transition to hybrid silicon/electro-optic polymer devices in future integrated optics applications.
机译:在这项工作中提出了一种新型的谐振腔光学调制器的设计和仿真,该谐振器包含混合硅/电光聚合物缝隙波导结构。该器件利用空腔区域中的电光聚合物提供调制的活性材料,并在空腔两端的单模硅波导区域中包括分布式布拉格反射器,以在谐振波长处产生狭窄的响应峰。仿真结果表明,这种电光调制器设计可以同时实现较大的调制深度,较短的器件长度和较低的驱动电压,而所有这些对于未来的高速集成光学器件而言都是必需的。结构的高工作频率和复杂特性导致需要进行完整的3D模拟,以获得准确的传播特性,特别是在散射损耗方面。但是,3D仿真的计算量非常大,尤其是在设计优化期间。因此,已经利用设备的周期性来允许采用级联矩阵方法来减少对传播特性进行精确仿真所需的必要计算资源。选择设计和制造过程是为了在将电光聚合物引入过程之前完成大部分制造过程,从而可以使用成熟的CMOS处理技术,并应加快向混合工艺的过渡未来集成光学应用中的硅/电光聚合物器件。

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