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首页> 外文会议>Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition >A dual-channel isolated resonant gate driver for low gate drive loss in ZVS Full-bridge converters
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A dual-channel isolated resonant gate driver for low gate drive loss in ZVS Full-bridge converters

机译：双通道隔离谐振栅极驱动器，可降低ZVS全桥转换器中的栅极驱动损耗

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摘要

As the switching frequency increases, to reduce the gate drive loss combined with the Zero-Voltage-Switching (ZVS) technique is meaningful for the widely used Full-Bridge (FB) converters. A dual-channel isolated Resonant Gate Driver (RGD) is proposed in this paper. The proposed RGD is able to provide two isolated complementary drive signals for two power MOSFETs in one bridge leg. Furthermore, the proposed RGD reduces about 79% gate drive loss compared to the conventional Voltage Source Driver (VSD). In addition, the negative gate drive voltage provided by the proposed RGD prevents the false trigger problem. The optimum design of the proposed RGD is given in detail. A 200-VDC input, 48-V/ 20-A output and 500-kHz phase-shift ZVS FB converter with the proposed RGD was built to verify the advantage and efficiency improvement.
机译：随着开关频率的增加，与零电压开关（ZVS）技术结合使用以减少栅极驱动损耗对于广泛使用的全桥（FB）转换器而言意义重大。本文提出了一种双通道隔离谐振门驱动器（RGD）。提出的RGD能够在一个桥臂中为两个功率MOSFET提供两个隔离的互补驱动信号。此外，与常规电压源驱动器（VSD）相比，建议的RGD降低了约79％的栅极驱动损耗。此外，建议的RGD提供的负栅极驱动电压可防止误触发问题。详细给出了建议的RGD的最佳设计。构建了具有建议的RGD的200-VDC输入，48-V / 20-A输出和500-kHz相移ZVS FB转换器，以验证其优势和效率提高。

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