npn Heterostruetural Optoelectronic Switch with Collector Confinement Layer

机译：具有集电极限制层的npn异型光电开关

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In order to achieve high optical sensitivity and low holding power, a wide-gap carrier confinement layer was introduced into the collector region of an npn-heterostructure optoelectronic switch. A similar device without the confinement layer was also fabricated to demonstrate the performance improvement. Both devices were found to have bistable electrical states: a high-impedance OFF state connected to a low-impedance ON state by a region of negative differential resistance (NDR). The functional characteristics were based on the avalanche multiplication.

机译：为了实现高光学灵敏度和低保持力，将宽间隙载流子限制层引入npn-异质结构光电开关的集电极区域。还制造了没有限制层的类似器件，以演示性能的提高。发现这两个器件都具有双稳态电状态：高阻抗OFF状态通过负差分电阻（NDR）区域连接至低阻抗ON状态。功能特征基于雪崩倍增。

著录项

来源
《Wide-bandgap semiconductor materials and devices 11 -and-state-of-the-art program on compound semiconductors 52 (SOTAPOCS 52)》|2010年|p.111-118|共8页
会议地点 Vancouver(CA);Vancouver(CA)
作者
Der-Feng Guo;
展开▼
作者单位

Department of Electronic Engineering, Air Force Academy, Kangshan, Kaohsiimg 820, Taiwan;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement [J] . Hung-tsao HSU, Yue-ming HSIN IEICE Transactions on Electronics . 2007,第1期

机译：新型集电极npn InGaP / GaAs异质结双极晶体管，具有p型掺杂埋层的电流限制仿真研究
2. Bulk-barrier and potential-spike height effects on characteristics of npn heterostructural optoelectronic switches [J] . D.-F. Guo IEE Proceedings. Part J, Optoelectronics . 2006,第2期

机译：体势垒和势峰高度对npn异质结构光电开关特性的影响
3. A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch [J] . Der-Feng Guo IEEE Electron Device Letters . 2003,第3期

机译：新型AlGaAs / GaAs / InAlGaP npn体垒光电开关
4. npn Heterostruetural Optoelectronic Switch with Collector Confinement Layer [C] . Der-Feng Guo Symposium "Wide-bandgap semiconductor materials and devices 11" . 2010

机译：NPN HEREOSTRUETATION光电开关，带收集器限制层
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A new switching parameter varying optoelectronic delayed feedback model with computer simulation [O] . Lingfeng Liu, Suoxia Miao, Mengfan Cheng, -1

机译：具有计算机仿真的新型开关参数变化光电延迟反馈模型
7. Dynamically Switching the Electronic and Electrostatic Properties of IndiumTin Oxide Electrodes with Photochromic Monolayers: Toward Photoswitchable Optoelectronic Devices [O] . -1

机译：用光致变色单层动态切换铟氧化铟氧化物电极的静电性能：朝向光电光电器件
8. Production Engineering Measure for Silicon NPN Switching Transistors [R] . Siegel, M., Freese, J. 1966

机译：硅NpN开关晶体管的生产工程措施

npn Heterostruetural Optoelectronic Switch with Collector Confinement Layer

摘要

著录项

相似文献

相关主题

期刊订阅