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首页> 外文期刊>IEEE Electron Device Letters >A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch
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A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch

机译：新型AlGaAs / GaAs / InAlGaP npn体垒光电开关

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摘要

Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V/sub S/ and decreases the switching current I/sub S/, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160/spl deg/C. This high-temperature performance provides the studied device with potential high-temperature applications.
机译：在新型AlGaAs / GaAs / InAlGaP光电器件中观察到了两端开关性能。该设备显示出开关动作通过负差分电阻（NDR）区域从低电流状态发生到高电流状态。从任一状态到另一状态的转变可以通过适当的光学或电输入来诱发。可以看出，照明的效果增加了开关电压V / sub S /，降低了开关电流I / sub S /，这与所报道的其他结果完全不同。此外，它甚至在160 / spl deg / C时仍具有明显的NDR。这种高温性能为所研究的器件提供了潜在的高温应用。

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