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首页> 外文会议>Wide bandgap semiconductor materials and devices 12 >Effects of SiO_2 Passivation on Oxygen Annealed AlGaN/GaN HEMTs
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Effects of SiO_2 Passivation on Oxygen Annealed AlGaN/GaN HEMTs

机译：SiO_2钝化对氧退火AlGaN / GaN HEMT的影响

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摘要

We have investigated the effects of SiO_2 passivation on the oxygen annealed AlGaN/GaN HEMTs. DC and pulsed I-V characteristics are analyzed to investigate the variation of trap level caused by SiO_2 passivation and oxygen annealing. Both of oxygen annealing and SiO_2 passivation are found to be effective methods to suppress the surface leakage current and increase the breakdown voltage of the AlGaN/GaN HEMTs. After an oxygen annealing, the leakage current is decreased from 621 μA/mm to 1.7 nA/mm when -5 V of Vgs and -50 V of Vds are applied. However, the leakage current is increased to 5.7 μA/mm after SiO_2 passivation on the oxygen annealed AlGaN/GaN HEMTs. The electron trapping through the deep trap is found to be the dominant mechanism of the suppressed leakage current of the AlGaN/GaN HEMTs due to the low probability of the de-trapping from the deep trap to conduction band. SiO_2 passivation suppresses the electron trapping through the deep trap, which is produced by oxygen annealing. The breakdown voltage of the conventional device without any treatment is 180 V. After oxygen annealing, the breakdown voltage is increased to 830 V while the AlGaN/GaN HEMT employing both of SiO_2 passivation and oxygen annealing is 650 V.
机译：我们已经研究了SiO_2钝化对氧退火的AlGaN / GaN HEMT的影响。分析了直流和脉冲I-V特性，以研究由SiO_2钝化和氧退火引起的陷阱能级的变化。发现氧退火和SiO 2钝化都是抑制表面漏电流并增加AlGaN / GaN HEMT的击穿电压的有效方法。氧退火后，当施加-5 V的Vgs和-50 V的Vds时，泄漏电流从621μA/ mm减小到1.7 nA / mm。但是，在经过氧退火的AlGaN / GaN HEMT上进行SiO_2钝化后，泄漏电流增加到5.7μA/ mm。发现通过深陷阱捕获的电子是抑制了AlGaN / GaN HEMT泄漏电流的主要机制，因为从深陷阱捕获到导带的可能性很小。 SiO_2钝化可抑制通过氧退火产生的通过深陷阱的电子陷阱。常规器件未经任何处理的击穿电压为180V。氧退火后，击穿电压增加至830 V，而同时采用SiO_2钝化和氧退火的AlGaN / GaN HEMT为650V。

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  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    Ogyun Seok; Young-Shil Kim; Min-Woo Ha; Min-Koo Han;

  • 作者单位

    School of Electrical Engineering, Seoul National University, Gwan-ak ro 599, Gwan-ak gu, Seoul 151-744, Korea;

    School of Electrical Engineering, Seoul National University, Gwan-ak ro 599, Gwan-ak gu, Seoul 151-744, Korea;

    Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam, Gyeonggi-do 463-816, Korea;

    School of Electrical Engineering, Seoul National University, Gwan-ak ro 599, Gwan-ak gu, Seoul 151-744, Korea;

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  • 正文语种 eng
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