Molecular Beam Epitaxial Growth, Fabrication, and Characterization of High Efficiency InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes on Si(111)

著录项

• 来源
  《Wide bandgap semiconductor materials and devices 12》|2011年|p.41-46|共6页
• 会议地点 Montreal(CA);Montreal(CA)
• 作者

  H. P. T. Nguyen; S. Zhang; K. Cui; X. Han; Z. Mi;

  展开▼
• 作者单位

  Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada;

  Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada;

  Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada;

  Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada;

  Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词