3C-SiC film growth on Si substrates

机译：在硅衬底上生长3C-SiC膜

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The aim of this work is to give an overview on 3C-SiC growth on Si substrates. Starting from the reasons why SiC is considered such an interesting innovative material, with a survey of application already demonstrated, we will present data explaining the most important issues in this hetero-epitaxy system and how the chemical vapor deposition process influences the resulting 3C-SiC film properties. 3C-SiC crystal structure is strongly dependent on the process parameters within the reaction chamber during growth as well as the substrate surface properties. Part of this work is then focused on the main crystallographic defects characterizing the 3C-SiC/Si system and on the resulting wafer bow due to the large misfit between the materials. Defects and wafer bow, are a direct consequence of the large stress generated at the interface. The work closes discussing the encouraging improvements in 3C-SiC crystal quality obtained by the introduction of compliant Si substrates.

机译：这项工作的目的是概述Si衬底上3C-SiC的生长。从为什么将SiC视为如此有趣的创新材料的原因开始，已经进行了应用调查，我们将提供数据解释该异质外延系统中最重要的问题以及化学气相沉积过程如何影响所得的3C-SiC膜性能。 3C-SiC晶体结构在很大程度上取决于生长过程中反应室内的工艺参数以及衬底表面性能。然后，这项工作的一部分将重点放在表征3C-SiC / Si系统的主要晶体学缺陷上，以及由于材料之间的较大失配而导致的晶圆弯曲。缺陷和晶圆弯曲是界面处产生的巨大应力的直接结果。这项工作结束时讨论了通过引入顺应性硅衬底而在3C-SiC晶体质量方面令人鼓舞的改进。

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《Wide bandgap semiconductor materials and devices 12》|2011年|p.99-116|共18页
会议地点 Montreal(CA);Montreal(CA)
作者
A. Severino; C. Locke; R. Anzalone; M. Camarda; N. Piluso; A. La Magna; S.E.Saddow; G. Abbondanza; G. DArrigo; F. La Via;
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CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

University of South Florida, EE Dept., 4202 E. Fowler Ave., 33625, Tampa, FL, USA;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

University of South Florida, EE Dept., 4202 E. Fowler Ave., 33625, Tampa, FL, USA;

Epitaxial Tech. Center, 16a Strada, Contrada Torre Allegra, 95030, Catania, Italy;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

CNR-IMM, Stradale Primosole 50,95121, Catania, Italy;

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1. Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD [J] . Gwiy-Sang Chung, Kang-San Kim Bulletin of the Korean Chemical Society . 2007,第4期

机译：使用六甲基二硅烷单源前驱体通过APCVD在Si（100）衬底上异质外延生长单3C-SiC薄膜
2. Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD [J] . Gwiy-Sang Chung, Kang-San Kim Bulletin of the Korean Chemical Society . 2007,第4期

机译：通过APCVD使用六甲基二硅烷的单源前体对Si（100）基底上的单一3C-SiC薄膜的异质生长
3. Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si(100) substrates by APCVD [J] . Biao Shi, Xue-Chao Liu, Ming-Xing Zhu, Applied Surface Science . 2012,第期

机译：丙烷/硅烷比率对APCVD在Si（100）衬底上生长3C-SiC薄膜的影响
4. Heteroepitaxial Growth of 3C-SiC Thin Films on Si (100) Substrates by Single Source Chenical Vapor Deposition for MEMS Applications [C] . Chung, Gwiy-Sang, Kim, . 2006

机译：通过单源化学气相沉积在MEMS（Si）（100）衬底上异质外延生长3C-SiC薄膜
5. Growth and characterization of epitaxial 3C-SiC films on silicon for electronic applications. [D] . Jacob, Chacko. 1997

机译：电子应用硅上外延3C-SiC薄膜的生长和表征。
6. RF Sputtering Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates [O] . Visakh Valliyil Sasi, Abid Iqbal, Kien Chaik, 2017

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3C-SiC film growth on Si substrates

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