A Novel InGaN Blue Light-Emitting Diode with a Self-Textured Oxide Mask Structure

著录项

• 来源
  《Wide bandgap semiconductor materials and devices 12》|2011年|p.53-59|共7页
• 会议地点 Montreal(CA);Montreal(CA)
• 作者

  W. Y. Lin; D. S. Wuu; S. C. Huang; S. Y. Lo; C. M. Liu; R. H. Horng;

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• 作者单位

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C;

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C,Department of Electrical Engineering, Da-Yeh University, Changhua 51591, Taiwan, R.O.C;

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C;

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C;

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C;

  Department of Electro-Optical Engineering, National Cheng Rung University, Tainan 70101, Taiwan, R.O.C;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词