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Ultra-Thin GaN Membranes Fabricated by Using Surface Charge Lithography

机译：表面电荷光刻技术制备的超薄GaN膜

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摘要

We report on fabrication of ultra-thin GaN membranes of nanometer scale thickness, by using the concept of surface charge lithography based on low-energy ion treatment of the sample surface with subsequent photoelectrochemical etching. The membranes prove to be transparent to both electrons and UV radiation, emit mainly yellow cathodoluminescence, and exhibit electrical conductivity. Successful fabrication of nanometer-thin membranes opens unique possibilities for exploration of two dimensional GaN-based structures predicted to be ferromagnetic with defect-induced half-metallic configuration which is of peculiar importance for spintronics applications.
机译：我们通过使用基于低能量离子处理样品表面并随后进行光电化学蚀刻的表面电荷光刻技术，报道了纳米级厚度的超薄GaN膜的制造。膜对电子和紫外线辐射均是透明的，主要发射黄色阴极发光，并显示出导电性。纳米薄膜的成功制造为探索二维的基于GaN的结构提供了独特的可能性，这些结构被预测为铁磁的，具有缺陷诱导的半金属结构，这对于自旋电子学应用具有特别重要的意义。

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  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    I. M. Tiginyanu; V. Popa; M. A. Stevens-Kalceff;

  • 作者单位

    Laboratory of Nanotechnology, Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028, Moldova,National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004, Moldova;

    National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004, Moldova;

    School of Physics, University of New South Wales, Sydney NSW 2052, Australia;

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  • 正文语种 eng
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