Thick GaN Films Grown on Patterned Sapphire Substrates

机译：在图案化的蓝宝石衬底上生长的GaN厚膜

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GaN thick films grown on specially patterned 2" sapphire substrates by HVPE methods have lower bowing and are less susceptible to fracture than films grown on unpatterned substrates under the same growth conditions. Numerical calculations show good agreement with experiment. Such substrates could be an alternative to expensive GaN wafers sliced from GaN boules.

机译：与在相同生长条件下在未图案化的衬底上生长的膜相比，通过HVPE方法在特殊图案化的2“蓝宝石衬底上生长的GaN厚膜的弯曲度更低，并且不易破裂。数值计算表明与实验吻合良好。此类衬底可以替代从GaN圆棒切成的昂贵GaN晶片。

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《Wide bandgap semiconductor materials and devices 12》|2011年|p.91-97|共7页
会议地点 Montreal(CA);Montreal(CA)
作者
V. Voronenkov; R. Gorbunov; A. Tsyuk; P. Latyshev; Y. Lelikov; Y. Rebane; A. Zubrilov; N. Bochkareva; Y. Shretei;
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St.-Petersburg State Polytechnical University, 29, Polyteknicheskaya str., 194021, St.-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

St.-Petersburg State Polytechnical University, 29, Polyteknicheskaya str., 194021, St.-Petersburg, Russia;

Physics Institute of St.Petesburg State University, 1, Ulianovskaya str., 198504, St.-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

Ioffe Physical Technical Institute, 26, Polyteknicheskaya str., 194021, St-Petersburg, Russia;

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专利

1. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE [J] . HU Qiang, WEI Tong-Bo, DUAN Rui-Fei, 中国物理快报：英文版 . 2009,第009期

机译：HVPE在湿法刻蚀蓝宝石上直接生长的厚GaN薄膜的表征
2. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE [J] . 胡强, 魏同波, 段瑞飞, 中国物理快报：英文版 . 2009,第009期

机译：HVPE在湿法刻蚀蓝宝石上直接生长的厚GaN薄膜的表征
3. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern [J] . Koji Okuno, Takahide Oshio, Naoki Shibata, Japanese journal of applied physics . 2013,第8issue2期

机译：径向条纹图案的蓝宝石衬底上生长的GaN膜的生长模式和穿线位错行为
4. Thick GaN Films Grown on Patterned Sapphire Substrates [C] . V. Voronenkov, R. Gorbunov, A. Tsyuk, Symposium on Wide Bandgap Semiconductor Materials and Devices . 2011

机译：在图案化的蓝宝石基板上种植的厚GaN电影
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate [O] . YewChung Sermon Wu, A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, 2015

机译：凹图案蓝宝石衬底上生长的GaN基LED的晶体质量和光输出功率
7. Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate [O] . Arslan E., Ozturk M.K., Çakmak H., Demirel P., Özçelik S., Ozbay E. 2013

机译：在厚GaN模板和蓝宝石衬底上生长的InGaN层中镶嵌结构的演变
8. Enhanced ionic conduction at the film/substrate interface in LiI thin films grown on sapphire(0001) [R] . Lubben, D. , Modine, F. A. 1993

机译：在蓝宝石（0001）上生长的LiI薄膜中的薄膜/基板界面处的增强的离子传导

Thick GaN Films Grown on Patterned Sapphire Substrates

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