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Scribing/Breaking Methods for the Optoelectronic Devices of GaN-Based Semiconductor Films Grown on Sapphire Substrates
Scribing/Breaking Methods for the Optoelectronic Devices of GaN-Based Semiconductor Films Grown on Sapphire Substrates
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机译：蓝宝石衬底上生长的GaN基半导体薄膜的光电子器件的划线/断裂方法
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摘要
In the present invention has been to grow the gallium nitride-based semiconductor thin film on sapphire substrate according to the production method for separating a next chip manufactured as an optical element, in particular, chip production method of the gallium nitride-based light emitting device, in which gallium nitride is grown on a sapphire substrate based semiconductor thin film and the metal electrode pattern formed on a said sapphire substrate manufactured as an optical element, the chip separation includes a breaking groove produced by a dry etching method for the semiconductor thin film surface during the one to prevent the formation of micro-cracks on the semiconductor thin film layer and characterized in that.; The present invention, as shown in the above, to form a micro-crack due to excessive ungryeok around the optical element chip by the chip instead of the conventional square type select a chip pattern of a rectangular or flat quadrilateral to select a chip separating line that matches the crystal plane direction It is effective to produce a good chip reliability is not provided.
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