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首页> 外文会议>Wide bandgap semiconductor materials and devices 16 >High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates
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High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates

机译：在规则排列的微棒模板上过度生长的半极性（11-22）GaN上生长的InGaN / GaN量子阱结构产生的高效绿黄色发射

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摘要

A simple but cost-effective overgrowth technique has been developed for the growth of semi-polar (11-22) GaN on mask-patterned micro-rod array templates fabricated on thin (11-22) GaN layers on sapphire. As a result, a fast coalescence with a thickness of ～1 μm has been obtained. Massively improved crystalline quality has been achieved, confirmed by detailed X-ray rocking curve measurements, which show that the full width at half maximum (FWHM) has been reduced to 0.096° and 0.097° at both 0° and 90° azimuth angle measured on an overgrown sample with a total thickness of 4.5 μm. The root mean square (RMS) roughness measured by atomic force microscopy is 1.47 nm. A number of InGaN/GaN multiple quantum well (MQW) structures with high In composition have been grown on the overgrown semi-polar GaN templates, showing strong photoluminescence (PL) emission with a wavelength from 495 to 590 nm at room temperature. Temperature dependent PL measurements have been performed to estimate their internal quantum efficiency (IQE), demonstrating ～ 8% of IQE for the sample with an emission wavelength of 590 nm. Power dependent PL measurements indicate weak quantum confined Stark effects (QCSE).
机译：已经开发了一种简单但具有成本效益的过度生长技术，用于在蓝宝石上的薄（11-22）GaN层上制造的掩模图案微棒阵列模板上生长半极性（11-22）GaN。结果，获得了厚度约为1μm的快速聚结。详细的X射线摇摆曲线测量结果证实，晶体质量得到了极大的改善，测量结果表明，在0°和90°方位角下，半高全宽（FWHM）已减小至0.096°和0.097°。杂草丛生的样品，总厚度为4.5μm。通过原子力显微镜测量的均方根（RMS）粗糙度为1.47 nm。在过度生长的半极性GaN模板上已经生长了许多具有高In组成的InGaN / GaN多量子阱（MQW）结构，在室温下显示出波长为495至590 nm的强光致发光（PL）发射。已经进行了与温度有关的PL测量，以估计其内部量子效率（IQE），对于发射波长为590 nm的样品，IQE约为8％。功率相关的PL测量表明弱量子限制的斯塔克效应（QCSE）。

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  • 会议地点 Chicago IL(US)
  • 作者

    Y. Gong; K. Xing; B. Xu; X. Yu; Z. Li; J. Bai; T. Wang;

  • 作者单位

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom;

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