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Ultra-Small ZnO Nanoparticles for Charge Storage in MOS-Memory Devices

机译:超小ZnO纳米颗粒,用于MOS存储设备中的电荷存储

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摘要

ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.
机译:ZnO纳米粒子因其优异的性能而受到行业和研究的关注。然而,纳米颗粒的团聚被认为是限制因素,因为它会影响纳米颗粒的理想的物理和电子性能。在这项工作中,研究了通过浸涂沉积的1-5nm厚的ZnO纳米颗粒。结果表明,浸涂导致ZnO(2-D纳米结构)中的1-D量子受限。具有ZnO纳米粒子电荷俘获层的存储器件显示,由于ZnO中存在大量可用的电荷俘获状态,因此在低工作电压下可以获得较大的存储器窗口。此外,出色的保留和耐久特性表明ZnO纳米粒子有望用于低功耗存储应用。

著录项

  • 来源
  • 会议地点 San Diego(US)
  • 作者

    N. El-Atab; A. Nayfeh;

  • 作者单位

    Institute Center for Microsystems - iMicro, EECS, Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates;

    Institute Center for Microsystems - iMicro, EECS, Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates;

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  • 正文语种 eng
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