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Growth of III-nitrides by rf-assisted molecular-beam epitaxy

机译：射频辅助分子束外延生长III族氮化物

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摘要

GaN, AlGaN, AlN were grown on (0001) Al_2)_3 substrates by MBE using a RF plasma source and employing an AlN buffer layer. The films were characterized by RHEED, AFM, and x-ray diffraction, and electrical properties were measured by Hall technique. RHEED observations indicate that the polarity of teh films is likely predominantly N-face, although Ga-face inversion domains can be observed in some films by AFM. Symmetric x-ray rocking curve widths as low as 39 arcseconds are achieved for some layers, while asymmetric peaks show widths of 240-300 arcsec. Control of Si doping over a wide range is demonstrated, which is important for design of high power device structures. Gold Schottky barrier m-v-n~+ diodes were fabricated which achieve high reverse electric fields before edge breakdown.
机译：GaN，AlGaN，AlN通过MBE使用RF等离子源并采用AlN缓冲层在（0001）Al_2）_3衬底上生长。通过RHEED，AFM和X射线衍射对膜进行表征，并通过霍尔技术测量电性能。 RHEED的观察结果表明，尽管通过AFM在某些薄膜中可观察到Ga面反转域，但该薄膜的极性可能主要为N面。某些层的对称X射线摇摆曲线宽度低至39弧秒，而非对称峰的宽度为240-300弧秒。展示了在宽范围内控制Si掺杂，这对于设计高功率器件结构非常重要。制造了肖特基金阻挡层m-v-n〜+二极管，该二极管在边缘击穿之前实现了高反向电场。

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