Cathodoluminescence deep-level spectroscopy of etched and in situ annealed 6H-SiC

机译：蚀刻和原位退火6H-SiC的阴极发光深层光谱

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Through variable-energy electron beam excitation (0.5 keV-2.0 keV), we observe depth dependent differences in the cathodoluminescence spectra of 6H-SiC(0001) Si-terminated surfaces. The etched SiC exhibits three deep level defects in the near-surface region, including a defect peak observed at 0.92 eV, known to be associated with vanadium. In-situ annealing produces a dramatic relative decrease in the luminescence from vanadium impurities near the surface after annealing to 500 deg, and then the subsequent re-emergence of vanadium in the near-surface regime after annealing to 810 deg. This temperature-dependent redistribution suggests either diffusion or segregation of vanadium from the bulk up toward the near-surface region.

机译：通过可变能量电子束激发（0.5 keV-2.0 keV），我们观察到6H-SiC（0001）Si端接表面的阴极发光光谱的深度相关差异。蚀刻的SiC在近表面区域表现出三个深层缺陷，包括在0.92 eV处观察到的与钒有关的缺陷峰。原位退火在退火至500度后会从表面附近的钒杂质中产生显着的相对发光，然后在退火至810度后在近表面状态中钒随后重新出现。这种与温度有关的重新分布表明钒从块体向近表面区域扩散或偏析。

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《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.137-142|共6页
会议地点 San Francisco CA(US)
作者
A.P.Young; K.Aptowitz; L.J.Brillson;
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中图分类无线电电子学、电信技术;
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3. Deep-level transient spectroscopy and cathodoluminescence of Cd_xZn_(1-x)Te/ZnTe QW structures grown on GaAs(l 0 0) by MBE [J] . V.I. Kozlovsky, Yu.G. Sadofyev, V.G. Litvinov Journal of Crystal Growth . 2000,第期

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4. Cathodoluminescence deep-level spectroscopy of etched and in situ annealed 6H-SiC [C] . A.P.Young, K.Aptowitz, L.J.Brillson, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：蚀刻和原位的阴极发光深度光谱反向6h-sic
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Cathodoluminescence deep-level spectroscopy of etched and in situ annealed 6H-SiC

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