Low-temeprature homoepitaxial growth of GaN using hyperthermal molecular beams

机译：使用高温分子束的低温同质外延生长GaN

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In situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH_3-seeded supersonic molecular beams was investigated. Removal of surface carbon and oxygen contaminants was achieved by heating at 730 deg under a hyperthermal NH_3 beam. Oxygen is removed primarily by thermal desorption; however, carbon removal requires an NH_3 flux. Atomically smooth surface with regular steps are obtained after NH_3 beam cleaning. Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 700 deg by employing a 0.61-eV NH_3 beam and an effusive Ga source.

机译：研究了使用NH_3注入的超声分子束原位清洁MOCVD生长的GaN / AlN / 6H-SiC衬底。通过在高温NH_3光束下于730度加热来去除表面的碳和氧污染物。氧气主要通过热脱附去除；但是，除碳需要NH_3助熔剂。 NH_3光束清洁后，可获得具有规则台阶的原子光滑表面。通过使用0.61-eV NH_3光束和可喷射的Ga源，在700度下完成了光滑，高度织构的GaN膜的同质外延生长。

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《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.437-444|共8页
会议地点 San Francisco CA(US)
作者
A.Michel; E.Chen; D.Thomson; O.Nam; R.F.Davis; H.H.Lamb;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth [J] . Shuichi KUBO, Shiro IWATA, Satoshi KURAI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第11A期

机译：通过压力控制溶液生长制备的块状GaN单晶上反应性分子束外延生长GaN层的同质外延生长
2. Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications [J] . D. F. Storm, D. S. Katzer, J. A. Mittereder, Journal of Crystal Growth . 2005,第1期

机译：在独立的HVPE氮化镓上通过分子束外延生长GaN和AlGaN / GaN异质结构的同质外延，用于电子设备应用
3. Homoepitaxial growth of GaN thin layer by molecular beam epitaxy with an RF nitrogen plasma [J] . Shuichi Kubo, Satoshi Kurai, Tsunemasa Taguchi Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2000,第1期

机译：用射频氮等离子体通过分子束外延生长GaN薄膜的同质外延生长
4. Low-temeprature homoepitaxial growth of GaN using hyperthermal molecular beams [C] . A.Michel, E.Chen, D.Thomson, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：使用超热分子梁的GaN的低温同性恋生长
5. Homoepitaxial growth of gallium nitride films using seeded supersonic molecular beams. [D] . McGinnis, Arthur J. 2000

机译：使用晶种超音速分子束对氮化镓膜进行同质外延生长。
6. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy [O] . Yongjin Wang, Fangren Hu, Kazuhiro Hane 2011

机译：分子束外延在独立式GaN光栅上InGaN / GaN量子阱的图案生长
7. Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy [O] . Kushvaha, S. S., Kumar, M. Senthil, Shukla, A. K., 2015

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8. Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. [R] . Glaser, E. R., Murthy, M., Freitas, J. J., 2007

机译：分子束外延生长mg掺杂GaN同质外延层的光学和磁共振研究。

Low-temeprature homoepitaxial growth of GaN using hyperthermal molecular beams

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