MOLECULAR BEAM EPITAXY (MBE) GROWTH OF SEMI-INSULATING C-DOPED GAN

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• 2. 一种控制GaN纳米线结构与形貌的分子束外延生长方法 [P] . 中国专利： CN110284198B . 2020.11.10
• 3. Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN [P] . 英国专利： GB2350842B . 2004-02-25

  机译： 半绝缘C掺杂GaN的分子束外延（MBE）生长

• 4. Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN [P] . 美国专利： US6544867B1 . 2003-04-08

  机译： 半绝缘C掺杂GaN的分子束外延（MBE）生长

• 5. MOLECULAR BEAM EPITAXY (MBE) GROWTH OF SEMI-INSULATING C-DOPED GAN [P] . CA2311061A1 . 2000-12-11

  机译： 半绝缘C掺杂GAN的分子束外延（MBE）生长

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