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首页> 外文期刊>Journal of Crystal Growth >Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy
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Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy

机译：射频等离子体辅助分子束外延制备的Cr掺杂半绝缘GaN模板的生长与表征

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摘要

Cr-doped semi-insulating GaN templates were grown using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). The samples were characterized by high resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The Cr incorporation was strongly dependent on the growth condition, which was primarily influenced by Cr cell temperature. The activation energy of dark conductivity was about 0.48 eV which corresponds to the depth of the dominant electron traps pinning the Fermi level. The experimental results indicated that Cr doping did not affect the crystalline orientation of the GaN film but introduced more threading dislocations, and step-graded GaN/Al_xGa_(1-x)N superlattices (SLs) played an important role in hindering the penetration of the threading dislocations.
机译：使用射频等离子体辅助分子束外延（RF-MBE）生长Cr掺杂的半绝缘GaN模板。样品通过高分辨率X射线衍射（HRXRD），原子力显微镜（AFM）和透射电子显微镜（TEM）进行表征。 Cr的掺入强烈依赖于生长条件，而生长条件主要受Cr细胞温度的影响。暗电导率的活化能约为0.48 eV，对应于固定费米能级的主要电子陷阱的深度。实验结果表明，Cr掺杂不会影响GaN薄膜的晶体取向，但会引入更多的螺纹位错，并且阶梯梯度GaN / Al_xGa_（1-x）N超晶格（SLs）在阻碍氮化镓的渗透方面起着重要作用。螺纹脱位。

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  • 来源
    《Journal of Crystal Growth》 |2012年第1期|p.162-167|共6页
  • 作者

    Fei Mei; Zhijie Yang; Jinxia Xu; Linzhang Wu; Tiezhou Wu; Danming Zhang;

  • 作者单位

    School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, PR China;

    School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, PR China;

    Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, PR China;

    School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, PR China;

    School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, PR China;

    School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B1. Transition metal;

    机译：A1。掺杂A3。分子束外延;B1。氮化物;B1。过渡金属;

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