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Comparative study of GaN MOVPE grwoth processes using two different 'surface preparation-carrier gas' combinations

机译：使用两种不同的“表面处理-载气”组合对GaN MOVPE常规工艺的比较研究

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摘要

The growth modes and resulting microstructures of GaN films grown by Metalorganic Vapor Phase Epitaxy (MOVPE) on (0001) sapphire with either a simple nitridation of the surface and N_2 as carrier gas or with a treatment of the nitridated surface under silane and ammonia with a mixture of H_2 and N_2 as carrier gas have been investigated. The second process results in a three dimensional first stage of the growth before a coalescence of the islands and the smoothing of the surface. Using this growth process, the defects density can be decreased down to 3.10~8 cm~(-2). This reduction in defect density has a drastic effect on photoluminescence properties of the material, and the luminescence efficiency can be increased by a factor of 20. It is also observed that the strain of this material is much higher as compared with material grown with the first process.
机译：通过（0001）蓝宝石上的金属有机气相外延（MOVPE）生长的GaN薄膜的生长模式和所得的微观结构，该氮化镓的表面经过简单氮化，并以N_2作为载气，或者在硅烷和氨气下用氮化硅处理氮化表面。研究了H_2和N_2作为载气的混合物。第二过程导致在岛的聚结和表面光滑之前的三维第一阶段生长。通过这种生长工艺，缺陷密度可以降低到3.10〜8 cm〜（-2）。缺陷密度的降低对材料的光致发光性能产生了巨大影响，并且发光效率可以提高20倍。还可以观察到，与第一种材料生长的材料相比，该材料的应变要高得多。处理。

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