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Nitridation of substrates with hydrazine cyanurate for the growth of gallium nitride

机译：用氰尿酸肼对衬底进行氮化，以生长氮化镓

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摘要

The use of purified hydrazine cyanurate as a solid source of hydrazine in the low temeprature nitridation of GaAs (100) and (111) and sapphire (0001) is demonstrated. The nitridated surfaces were analyzed by X--ray Photoelectron Spectroscopy (XPS) for chemical composition and Atomic Force Microscopy for surface morphology. The GaAs surfaces were composed primarily of GaN, GaAs, and Ga_2O_3, and were as smooth as unprocessed standards. The nitridated sapphire surfaces were composed of AlN_xO_(1-x) and exhibited three-dimensional growth for long nitridation times.
机译：已证明在GaAs（100）和（111）和蓝宝石（0001）的低热电氮化中使用纯化的氰尿酸氰尿酸酯作为肼的固体源。氮化表面通过X射线光电子能谱（XPS）进行化学成分分析，原子力显微镜进行表面形态分析。 GaAs表面主要由GaN，GaAs和Ga_2O_3组成，并且与未处理的标准材料一样光滑。氮化蓝宝石表面由AlN_xO_（1-x）组成，并且在长时间氮化后呈现三维生长。

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