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Reaction processes at the initial stage of diamond nucleation on the surface of Si(111)

机译：Si（111）表面金刚石成核初期的反应过程

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The thermal behavior of CH_x(x=2-3) radicals and H atoms absorbed on Si(111) surface was investigated using high-resolution electron-energy-loss spectroscopy (HREELS), quadrupole mass spectrometry (QMS), and low-energy electron diffraction (LEED). We found that CH_x(x=2-3) radicals in the top adlayers of saturate adsorption were not stable, and the loose structures among a few top adlayers broke up completely till 550K. TDMS (thermal desorption mass spectrometry) analysis showed significant desorption of atomic hydrogen, CH_2 and CH_3. In the region of 550K-750K, only H_2 was detected by TDMS, and we speculate that the CH_x(x=2-3) species catenate each other, and form a network of hydrocarbon, which is possibly the initial stage of diamond nucleation on Si. This formed network was not stable above 800K, C_2 hydrocarbon species catenate each other, and form a network of hydrocrbon, which is possibly the initial stage of diamond nucleation on Si. This formed network was not stable above 800K, C_2 hydrocarbon species were observed after the thermal desorption temperature was over 800K. HREELS measurement demonstrated that no H atoms existed when substrate temperature reached 980K. Compared with the result reported by S.-Tong Lee for diamond (Ref.12), we conclude that low stability of hydrocarbon species on Si is the dominant reason that results in the difficulty of diamond nucleation on perfect Si surface.
机译：使用高分辨率电子能量损失谱（HREELS），四极质谱（QMS）和低能谱研究了CH_x（x = 2-3）自由基和被Si（111）表面吸收的H原子的热行为电子衍射（LEED）。我们发现饱和吸附剂顶层中的CH_x（x = 2-3）自由基不稳定，少数顶层中的松散结构完全破裂直至550K。 TDMS（热脱附质谱）分析显示原子氢，CH_2和CH_3有显着的脱附。在550K-750K区域，通过TDMS仅检测到H_2，我们推测CH_x（x = 2-3）物种相互连接，并形成烃网络，这可能是金刚石成核的初始阶段。硅。该形成的网络在800K以上不稳定，C_2烃类相互连接，形成氢键网络，这可能是Si上金刚石成核的初始阶段。该形成的网络在800K以上不稳定，在热脱附温度超过800K后观察到C_2烃类。 HREELS测量表明，当底物温度达到980K时，不存在H原子。与S.-Tong Lee报告的金刚石结果（参考文献12）相比，我们得出的结论是，烃类在Si上的低稳定性是导致金刚石在理想Si表面成核困难的主要原因。

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