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首页> 外文会议>Wide-Bandgap semiconductors for high power, high frequency and high temperature >Two-step growth of GaN quantum dots with metalorganic chemical vapor deposition
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Two-step growth of GaN quantum dots with metalorganic chemical vapor deposition

机译：金属有机化学气相沉积法两步生长GaN量子点

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摘要

Nanometer-scale GaN dots were successfully fabricated on sapphire using metalorganic chemical vapor deposition (MOCVD0 by two-step method, including depositing around 500 deg and annealing at 1050 deg. The density of GaN dots is from 5x10~8cm~(-2) to 6x10~9 cm~(-2), and the size is around 40 nm in diameter. The density and size of GaN dots are determined by an atomic force microscope (AFM), and they are controllable by changing temperature and duration of the growing. GaN dots only formed after annealing at high temperature, which is explained that the initial layer deposited around 500 deg is a high energy intermediate phase in which the large strain energy can not be relaxed because of the low temperature growing.
机译：通过金属有机化学气相沉积（MOCVD0）通过两步法成功地在蓝宝石上制备了纳米级GaN点，包括沉积约500度并在1050度下退火。GaN点的密度为5x10〜8cm〜（-2）至6x10〜9 cm〜（-2），直径约为40 nm，GaN点的密度和大小由原子力显微镜（AFM）确定，并且可以通过改变温度和生长时间来控制GaN点仅在高温退火后才形成，这说明在500度左右沉积的初始层是高能量中间相，其中由于低温生长而不能放松大应变能。

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