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首页> 外文学位 >Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition.
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Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition.

机译：铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。

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摘要

The Stranski-Krastanow growth mechanism of self-assembled InAs and InGaAs quantum dots on a GaAs substrate is examined. The atomic force microscopy (AFM) pictures show that the V/III ratio is the most important growth parameter in controlling the formation of three-dimensional islands, second only to the growth temperature. To adjust the arsine overpressure precisely on the epitaxial surface, a new gas switching sequence is designed and the use of hydrogen shroud flow as a means to change the surface kinetics is studied. With the new improved growth condition, InA quantum dot + quantum well lasers are demonstrated.; In order to achieve lower V/III ratio in material deposition, a new arsenic bubbler source, Tertiarybutylarsine (TBA), is installed. Further experimentation shows the photoluminescence of the discrete energy transitions of a layer of InGaAs quantum dots embedded in a GaAs waveguide with a wavelength as long as 1.219 μm with the use of submonolayer cycled deposition. However, the self-annealing effect is determined to be the major factor in limiting the realization of high-quality InGaAs QD lasers.; Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2 × 1010/cm2 for a 50-Å GaAs coupling barrier (QW to QD) to 3 × 1010/cm2 for a 5-Å barrier. The improved QD density and uniformity, as well as improved carrier collection, make possible room-temperature continuous-wave (cw) QD + QW laser operation (a single InAs QD layer) at reasonable diode length (∼1 mm), current density 586 A/cm2, and wavelength 1057 nm. QW-assisted single-layer InAs QD laser, a QD + QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼100 cm−1. The cw 300-K coupled InAs QD and InGaAs QW AlGaAs-GaAs-InGaA-InAs heterostructure lasers are grown by metalorganic chemical vapor deposition.
机译：研究了GaAs衬底上自组装InAs和InGaAs量子点的Stranski-Krastanow生长机理。原子力显微镜（AFM）图片显示，V / III比是控制三维岛形成中最重要的生长参数，仅次于生长温度。为了精确地调节外延表面上的砷化氢超压，设计了一种新的气体转换顺序，并研究了使用氢气护罩流作为改变表面动力学的手段。通过新的改进的生长条件，证明了InA量子点+量子阱激光器。为了在材料沉积中实现较低的V / III比，安装了新的砷起泡剂源，叔丁基ar（TBA）。进一步的实验显示了使用亚单层循环沉积技术，嵌入在GaAs波导中的InGaAs量子点层的离散能量跃迁的光致发光，该波长为1.219μm。然而，自退火效应被确定为限制实现高质量InGaAs QD激光器的主要因素。数据表明，除载流子收集方面的改进外，在AlGaAs-GaAs的单量子点（QD）层的隧穿距离内放置应变匹配辅助InGaAs层[量子阱（QW）]是有利的-InGaAs-InAs QD异质结构激光器，还可以实现具有更高密度和均匀性的更小尺寸QD。 QD密度从50ÅGaAs耦合势垒（QW到QD）的2×10 10 / cm 2 变为3×10 10 / cm 2 用于5Å阻挡层。改进的QD密度和均匀性，以及改进的载流子收集，使得在合理的二极管长度（〜1 mm），电流密度586下实现室温连续波（cw）QD + QW激光操作（单个InAs QD层） A / cm 2 ，波长为1057 nm。证实了QW辅助的单层InAs QD激光器，即QD + QW激光器，可连续工作（300 K），并且在二极管长度为150μm的脉冲操作中，增益高达100 cm -1 。通过金属有机化学气相沉积来生长连续的300-K耦合InAs QD和InGaAs QW AlGaAs-GaAs-InGaA-InAs异质结构激光器。

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  • 作者

    Chung, Theodore.;

  • 作者单位

    University of Illinois at Urbana-Champaign.;

  • 授予单位 University of Illinois at Urbana-Champaign.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 p.3961
  • 总页数 93
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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