The present invention provides a quantum wire structure capable of vertically laminating indium gallium arsenide (InGaAs) / gallium arsenide (GaAs) quantum wires to increase quantum efficiency. According to the method of manufacturing a quantum wire according to the present invention, a gallium arsenide barrier layer is formed under a process condition in which a V-groove having a sharp shape is formed on a gallium arsenide substrate on which a V-groove is formed, The active layer of indium gallium arsenide is grown alternately a plurality of times to produce quantum wires. The quantum wire formed by the lamination structure of indium gallium arsenide (InGaAs) / gallium arsenide (GaAs) by the above method has a strain due to lattice mismatching, and has excellent characteristics due to the strain effect in the fabrication of the quantum wire laser.
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