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首页> 外文OA文献 >Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy.
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Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy.

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。

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摘要

Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnAs/InAlAs. in the 1.3 μm wavelength region. exhibit lasing by optical pumping. Below threshold. the 800 nm integrated-mirror etalon is used for nonlinear switching which. in the architecture presented. is capable of extracting a single 10 ps pulse from a pair of pulses spaced 40 ps apart. Nonlinear optical properties of type II GaAs/AlAs short-period superlattices are presented and show an apparent high energy shift of the absorption band edge at 10K and no shift at 77 K as the absorption is saturated. Type I multiple quantum well structures of similar dimensions show similar high energy band edge shifts for both temperatures. 10K and 77 K due to phase-space filling. In contrast. electrons in type II structures reside in the barrier and do not contribute to the chemical potential. Transitions in GaAs/AlGaAs coupled-well superlattices show transitions that are a function of the center barrier thickness and reveal shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.
机译：纳秒泵浦探针光谱法将增益谱表征为具有AlGaAs势垒的GaAs多量子阱中阱宽的函数。在较宽的阱宽多个量子阱中，对于相同的峰值增益，增益带宽较大，并进行了定性说明。从增益谱计算出Iinewidth展宽因子，并将其作为材料参数进行研究。结果表明，线宽展宽因子随波长增加而随载流子密度减小。由GaAs / AlGaAs制成的MBE生长的集成镜标准具。在800 nm波长范围内。和GaAllnAs / InAlAs。在1.3μm波长范围内通过光泵浦产生激光。低于阈值。 800 nm集成镜标准具用于非线性切换。在介绍的架构中。能够从间隔为40 ps的一对脉冲中提取单个10 ps的脉冲。提出了II型GaAs / AlAs短周期超晶格的非线性光学特性，并显示了吸收带边缘在10K时出现明显的高能量位移，而在77K时由于吸收饱和而没有位移。尺寸相似的I型多量子阱结构在两个温度下均显示出相似的高能带边缘位移。由于相空间填充，分别产生了10K和77K。相反。 II型结构中的电子驻留在势垒中，对化学势无贡献。 GaAs / AlGaAs耦合阱超晶格中的跃迁表明，跃迁是中心势垒厚度的函数，并且比没有中心势垒的相同厚度的GaAs量子阱具有更短的载流子寿命。

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    Pon Russell Michael.;

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  • 年度 1991
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