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首页> 外文会议>World Conference on Photovoltaic Energy Conversion;European Photovoltaic Solar Energy Conference;Photovoltaic Science and Engineering Conference;IEEE Photovoltaic Specialist Conference >Characterization of SiGeSn for Use as a 1 eV Sub-Cell in Multi-Junction Solar Cells
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Characterization of SiGeSn for Use as a 1 eV Sub-Cell in Multi-Junction Solar Cells

机译：用作多结太阳能电池中1 eV子电池的SiGeSn的表征

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摘要

Four-junction solar cells require a sub-cell which absorbs across a 1 eV transition for optimal performance. Due to a lack of available lattice-matched materials with the correct bandgap, current high-efficiency 4J devices use lattice-mismatched sub-cells, complicating the fabrication process. Group IV ternary SiGeSn alloys are a promising material system for achieving a lattice-matched material with a 1 eV direct transition, with functional devices having already been demonstrated. However, further investigation of the fundamental properties of relevant SiGeSn alloys is key to fabricating an efficient 4J device. Results from steady-state photoluminescence and spectroscopic ellipsometry are presented for three different compositions compositions of SiGeSn grown lattice-matched to Ge/GaAs on GaAs substrates. The results show the expected blueshift in the fundamental indirect gap, measured through photoluminescence, and the lowest indirect gap around 1 eV, calculated through analysis of the ellipsometry data. The higher energy transitions also show the expected shifts.
机译：四结太阳能电池需要一个子电池，该子电池在1 eV的跃迁中吸收，以获得最佳性能。由于缺乏具有正确带隙的可用晶格匹配材料，当前的高效4J器件使用晶格不匹配子电池，从而使制造工艺复杂化。第四族三元SiGeSn合金是一种有前途的材料体系，用于实现具有1 eV直接跃迁的晶格匹配材料，并且已经证明了其功能器件。然而，进一步研究相关SiGeSn合金的基本性能是制造高效4J器件的关键。给出了在GaAs衬底上生长的与Ge / GaAs晶格匹配的SiGeSn的三种不同成分组成的稳态光致发光和椭圆偏振光谱法的结果。结果显示，通过椭圆光度法测得的基本间接间隙的预期蓝移，以及通过椭圆偏振数据的分析计算得出的最低间接间隙在1 eV附近。较高的能量跃迁也显示出预期的变化。

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