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首页> 外文期刊>Photovoltaics, IEEE Journal of >Demonstrating Dilute-Tin Alloy SiGeSn for Use in Multijunction Photovoltaics: Single- and Multijunction Solar Cells With a 1.0-eV SiGeSn Junction
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Demonstrating Dilute-Tin Alloy SiGeSn for Use in Multijunction Photovoltaics: Single- and Multijunction Solar Cells With a 1.0-eV SiGeSn Junction

机译：演示用于多结光伏的稀锡合金SiGeSn：具有1.0 eV SiGeSn结的单结和多结太阳能电池

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摘要

SiGeSn ternary alloys offer a means to fabricate a 1.0-eV subcell junction for inclusion in a multijunction solar cell. The main advantage of the SiGeSn alloy is a tuneable bandgap energy and variable lattice parameter, enabling the material to be integrated into the existing lattice-matched multijunction architectures. Recent growth, structural, optical, and device results from SiGeSn material, with energy gaps in the vicinity of 1.0 eV and lattice matched to Ge substrates, are presented. An all lattice-matched InGaP/InGaAs/SiGeSn triple-junction cell is presented and compared with a conventional InGaP/InGaAs/Ge solar cell. Comparable short-circuit current values of 13.9 mA/cm2 are obtained for both devices under the AM1.5G spectrum, whereas the open-circuit voltage and fill factor are reduced in the device with the SiGeSn subcell. Peak external quantum efficiency in the SiGeSn single junction in excess of 80% is realized, placing a lower limit on the base minority hole diffusion length of 5 m with surface recombination velocities in close agreement to those found in bulk Ge material.
机译：SiGeSn三元合金提供了一种制造1.0 eV子电池结的方法，该结可包含在多结太阳能电池中。 SiGeSn合金的主要优点是可调节的带隙能量和可变的晶格参数，使该材料可以集成到现有的晶格匹配多结结构中。介绍了最近由SiGeSn材料的生长，结构，光学和器件结果，其能隙在1.0 eV附近，晶格与Ge衬底匹配。提出了一种全晶格匹配的InGaP / InGaAs / SiGeSn三结电池，并将其与常规InGaP / InGaAs / Ge太阳能电池进行了比较。在AM1.5G频谱下，两个器件的可比短路电流值均为13.9 mA / cm2，而带有SiGeSn子电池的器件的开路电压和填充因数降低。 SiGeSn单结的外部量子效率达到了超过80％的峰值，对5 m的基极少数空穴扩散长度设置了下限，其表面复合速度与块状Ge材料中的复合速度非常接近。

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