GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

机译：GaAsN / GaAsSb超晶格为1 eV层，用于高效多结太阳能电池

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We demonstrate type-II GaAsSb/GaAsN superlattices as a suitable candidate to form a lattice-matched 1.01.15 eV subcell that could significantly improve the performance of multi-junction solar cells. The spatial separation of N and Sb allows better lattice-matching control, composition homogeneity, crystal quality and interface abruptness. Moreover, the type-II band alignment provides effective bandgap and radiative lifetime tunability through the period thickness. For the impact of period thickness on transport, quantum-kinetic simulations support the experimental finding of efficient carrier extraction at thicknesses up to 6 nm. All this leads to single-junction solar cells with improved efficiency under monochromatic illumination over the equivalent bulk devices.

机译：我们证明了II型GaAsSb / GaAsN超晶格作为形成晶格匹配的1.01.15 eV子电池的合适候选物，可以显着提高多结太阳能电池的性能。 N和Sb的空间分隔可实现更好的晶格匹配控制，成分均匀性，晶体质量和界面突变性。此外，II型能带对准可在整个周期厚度内提供有效的能带隙和辐射寿命可调性。对于周期厚度对传输的影响，量子动力学模拟支持实验发现在厚度最大为6 nm时有效的载流子提取。所有这些导致单结太阳能电池在单色照明下具有比同等体积的装置更高的效率。

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来源
《World Conference on Photovoltaic Energy Conversion;European Photovoltaic Solar Energy Conference;Photovoltaic Science and Engineering Conference;IEEE Photovoltaic Specialist Conference》|2018年|3463-3467|共5页
会议地点 Waikoloa Village(US)
作者
A. Gonzalo; A. D. Utrilla; U. Aeberhard; J.M. Llorens; B. Alén; V. Braza; D.F Reyes; D. González; D. Fuertes Marrón; A. Hierro; J.M. Ulloa;
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Institute for Systems based on Optoelectronics and Microtechnology (ISOM) Universidad Politécnica de Madrid Madrid 28040 Spain;

Forschungszentrum Jülich Institut für Energie und Klimaforschung - Photovoltaik (IEK-5) Jülich D52425 Germany;

IMN Instituto de Micro y Nanotecnología (CNM CSIC) Madrid E-28760 Spain;

University Research Institute on Electron Microscopy Materials (IMEYMAT) Universidad de Cádiz Puerto Real 11510 Spain;

Instituto de Energía Solar (IES) Universidad Politécnica de Madrid Madrid 28040 Spain;

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Photovoltaic cells; Photonic band gap; Charge carrier lifetime; Couplings; Temperature measurement; Metals;

机译：光伏电池；光子带隙；电荷载体寿命；联轴器；温度测量；金属制品;

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专利

1. Photocarrier extraction in GaAsSb/GaAsN type-Ⅱ QW superlattice solar cells [J] . Aeberhard U., Gonzalo A., Ulloa J. M. Applied Physics Letters . 2018,第21期

机译：GaAsSb / GaAsNⅡ型QW超晶格太阳能电池中的光载流子提取
2. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications [J] . Reyes D. F., Braza V., Gonzalo A., Applied Surface Science . 2018,第JUNa1期

机译：用于太阳能电池应用的II型GaAsSb / GaAsN超晶格中Sb和N分布的建模
3. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics [J] . Utrilla A.D., Reyes D.F., Ulloa J.M., Applied Physics Letters . 2014,第4期

机译：GaAsSb / GaAsN短周期超晶格作为覆盖层，用于改进的基于InAs量子点的光电
4. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells [C] . A. Gonzalo, A. D. Utrilla, U. Aeberhard, IEEE World Conference on Photovoltaic Energy Conversion . 2018

机译：GaAsn / Gaassb Supertrices作为高效多结太阳能电池的1个EV层
5. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells. [D] . Fong, David Michael. 2012

机译：电化学蚀刻锗和砷化镓形成的多孔层，用于高能效多结太阳能电池的分裂工程层转移（CELT）应用。
6. Strain-balanced type-II superlattices for efficient multi-junction solar cells [O] . A. Gonzalo, A. D. Utrilla, D. F. Reyes, -1

机译：应变平衡II型超晶格用于高效多结太阳能电池
7. Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells [O] . U. Aeberhard, A. Gonzalo, J. M. Ulloa 2018

机译：Gaassb / GaAsn Type-II QW超廓图太阳能电池的光载波提取

GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

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