The photovoltaic device type p-Cu2S-CdS was fabricated by using simple and low coast thin film technology. The n-CdS film of about 5.55μm thickness was prepared by using the chemical spray pyrolysis technique on hot Aluminum substrate at temperature 400°C. The p–Cu2S thin layer was prepared by using chemical dip process; the Cu2S layer was formed on the surface of the CdS film. The" heat treatment" at temperature in the range (150–200)°C was utilized to form the p–n junction, then the ohmic contact was made by using vacuum evaporation method with the help of special mask. The Ⅰ–Ⅴ characteristics for the prepared Cu2S–CdS solar cell were studied at different light intensities, and the efficiency of the prepared cells of different thickness of CdS layer was calculated, the results show that the thickness of the polycrystalline CdS film is an important parameter affecting the cell efficiency. The highest efficiency obtained was 2.8 % at 85.4 mW/cm2 light intensity for the cell of 5.55 μm thickness of CdS layer.
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