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Delta-doped CCDs for enhanced UV performance

机译：Delta掺杂的CCD可增强UV性能

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Abstract: Thin, backside-illuminated CCDs are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100% internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully processed commercial CCD die in which 30% of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. Reduction of the reflectivity of the Si surface by deposition of HfO$-2$/ on the CCD back surface further increased the QE, with measured QE over 80% in some regions of the spectrum. We discuss these results as well as the delta-doped CCD concept and process. !11
机译：摘要：通过使用分子束外延在背面上生长掺杂三角形的硅层，可以对背面照明的CCD薄板进行修改。掺Delta的CCD表现出稳定而均匀的100％内部量子效率。该工艺包括在完全加工的商用CCD芯片上生长外延硅层，其中30％的硼原子单层名义上在单个原子层中掺入晶格中。测试了长期稳定性，结果表明在16个月内器件量子效率没有降低。通过在CCD背面沉积HfO $ -2 $ /来降低Si表面的反射率，进一步提高了QE，在某些光谱区域中测得的QE超过80％。我们讨论了这些结果，以及δ掺杂CCD的概念和过程。 ！11

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