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首页> 外文会议>Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 >Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation
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Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation

机译：蒙特卡罗模拟分析ZnO相关量子阱中激子的局部动力学

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摘要

A quantitative interpretation of the anomalous temperature behavior is presented to describe the so-called "S-shape dependence" of the photoluminescence (PL) in ZnO-related quantum well layers by using an appropriate modeling and simulation. Experimental data for CdZnO/MgZnO and ZnO/MgZnO samples are modeled using Monte Carlo simulations of the involved relaxation mechanisms and thus providing a realistic picture of the excitonic kinetics. The temperature dependence of the PL maximum and full-width at half maximum could be simultaneously reproduced with reasonably good accuracy. Several informations about the distribution of the localization potential wells and identify their hopping transfers between separated states are deduced. We found that the temperature-dependent PL linewidth and Stokes shift is in a qualitatively reasonable agreement with the abovementioned model, with accounting for an additional inhomogeneous broadening for the case of linewidth for CdZnO quantum wells. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.
机译：提出了对温度异常行为的定量解释，以描述ZnO相关量子阱层中光致发光（PL）的所谓“ S形依赖性”，方法是使用适当的建模和仿真。 CdZnO / MgZnO和ZnO / MgZnO样品的实验数据使用涉及的弛豫机理的蒙特卡罗模拟进行建模，从而提供了激子动力学的逼真的图像。 PL最大值和半峰全宽的温度相关性可以以相当好的精度同时再现。推导了有关定位势阱分布的一些信息，并确定了它们在分离状态之间的跳跃转移。我们发现，温度相关的PL线宽和斯托克斯位移与上述模型在质量上合理地吻合，并考虑了CdZnO量子阱线宽情况下的额外不均匀加宽。 CdZnO QW的模拟中使用的局域态密度与5 K处的吸收光谱一致。

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