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A study of the etching and surface modification characteristics of polyimide films for use as a dielectric layer in multi-chip modules.

机译:对用作多芯片模块介电层的聚酰亚胺薄膜的蚀刻和表面改性特性的研究。

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摘要

Electronics packaging has evolved significantly over the past half-century from I hard-wired components to metal-plated ceramic substrates to the current era of microelectronics as multi-layered polymeric substrates. The limits of the current technology for multi-chip modules (MCM-D's) are the functionality and processing of the dielectric (polyimide) layer. Methods of improving the production of MCM-D's by using a self-adhesive dielectric film as well as evaluating potentially better alternative polyimide substrates are investigated. The effects of surface modification of the dielectric films by reactive ion etching (RIE) and argon plasma etching are also examined. By balancing material properties, processing conditions, and plasma modification of the polyimide films, smaller and more efficient MCM-D's can be produced.
机译:在过去的半个世纪中,电子封装已从I硬接线组件发展到金属镀层陶瓷基板,到微电子作为多层聚合物基板的时代已经有了很大发展。用于多芯片模块(MCM-D)的当前技术的局限性是介电层(聚酰亚胺)的功能和处理。研究了通过使用自粘介电膜改善MCM-D的生产以及评估可能更好的替代聚酰亚胺基材的方法。还研究了通过反应离子刻蚀(RIE)和氩等离子体刻蚀对介电膜进行表面改性的效果。通过平衡聚酰亚胺薄膜的材料性能,加工条件和等离子体改性,可以生产出更小,更有效的MCM-D。

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