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Magnetic force microscopy imaging of current paths in integrated circuits with overlayers.

机译:带叠加器的集成电路中电流路径的磁力显微镜成像。

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摘要

Mapping current paths in integrated circuits (IC) is expected to be important for design debug and failure analysis. Due to the rapid development of IC technology with higher transistor densities and smaller feature sizes, accurate location of the current paths buried under several layers of conducting interconnect is expected to have several important applications. Magnetic force microscope (MFM) holds great promise to meet this challenge and this work focuses on MFM based techniques for mapping current in conductors with over layers.;Extensive numerical modeling of the magnetic fields and the MFM images has shown that the simple point probe approximation is insufficient to model MFM mapping of current flow in ICs for the conductors used in this work. An extended model, which considers realistic MFM probe geometries and the forces acting on the whole probe including along the cantilever of the probe, has been shown to he necessary. Qualitative and quantitative comparison of the experimental results and simulation results with this model are in agreement to within experimental uncertainty. Analysis of the comparison suggested that the thickness of Cobalt coating is not uniform on different regions of the probe, which was verified by scanning electron microscope (SEM) cross section images of the probes cut by a focused ion beam (FIB). The thickness of the CoCr coating varies from 60 nm to 130 nm on the surface of the cantilever and from 30 nm to 110 nm on the surface of the tip. Correcting for film thickness variation in the model produced images for current flowing in buried conductors in very close agreement with the experimental results.;Based on the simulation and experimental results, we have devised a method to locate accurately the internal current path from MFM images with submicrometer uncertainty for simple model circuits. The method was tested for different patterns of model conducting lines. It was shown to be a useful technique for fault location in IC failure analysis when current flows through the devices buried under several layers and no topographic features are on the surface to provide clues about the positions of the devices.;This thesis presents a systematic study of MFM based mapping of current in model circuits by using force and force gradient techniques. In comparing these two techniques with respect to signal to noise ratio as a function of the tip height above the surface of conducting lines, force was found to have a much higher SNR (from ∼150 to ∼580 times) than force gradient. As a result, force based techniques will have better sensitivity and are able to detect much smaller minimum currents. For model circuits that mimic ICs, we have achieved a measurement sensitivity of approximately 1.02 muA/ Hz for force and 0.29 mA/ Hz for force gradient in air without magnet to maintain the orientation of the magnetic moments of the probe during the measurement (∼0.64 muA/ Hz in air and ∼0.095 muA/ Hz in vacuum for force with a magnet), this was achieved with a probe to circuit separation of one micron. We can conclude that the force measurement technique is superior for the application of MFM current imaging of buried conductors in ICs. However, this comes at the price of reduced spatial resolution.
机译:预期在集成电路(IC)中映射电流路径对于设计调试和故障分析非常重要。由于具有更高晶体管密度和更小特征尺寸的IC技术的飞速发展,掩埋在多层导电互连层下面的电流路径的精确位置有望具有一些重要的应用。磁力显微镜(MFM)有望迎接这一挑战,并且这项工作集中在基于MFM的技术上,该技术用于绘制具有覆盖层的导体中的电流。;磁场和MFM图像的广泛数值建模表明,简单的点探针近似不足以对用于此工作中的导体的IC中电流的MFM映射建模。已经证明有必要考虑扩展模型,该模型考虑了实际的MFM探针几何形状以及作用在整个探针上(包括沿着探针悬臂的力)的力。实验结果和模拟结果与该模型的定性和定量比较符合实验不确定性。比较分析表明,在探针的不同区域上钴涂层的厚度不均匀,这已通过聚焦离子束(FIB)切割的探针的扫描电子显微镜(SEM)截面图像得到了验证。 CoCr涂层的厚度在悬臂的表面从60 nm到130 nm,在尖端的表面从30 nm到110 nm。校正模型产生的膜厚变化,使图像产生与埋入导体中流动的电流非常接近的实验结果。;基于仿真和实验结果,我们设计了一种从MFM图像中精确定位内部电流路径的方法。简单模型电路的亚微米不确定度。测试了该方法的模型导线的不同模式。当电流流经埋在几层之下的器件并且表面上没有地形特征以提供有关器件位置的线索时,这被证明是一种用于IC故障分析的故障定位的有用技术。力和力梯度技术在模型电路中基于MFM的电流映射的研究。在将这两种技术的信噪比作为导线表面上方尖端高度的函数进行比较时,发现力比力梯度具有更高的SNR(约150至580倍)。结果,基于力的技术将具有更好的灵敏度,并且能够检测到更小的最小电流。对于模拟IC的模型电路,在没有磁体的情况下,我们在空气中的力的测量灵敏度约为1.02μA/ Hz,对于力梯度的测量灵敏度约为0.29 mA / Hz,以在测量过程中保持探头的磁矩方向(〜0.64空气中的微安/赫兹(Hz)和真空中约0.095微安/赫兹的磁场(用磁铁施加力),这是通过探针与电路隔离1微米实现的。我们可以得出结论,对于IC中埋入式导体的MFM电流成像应用而言,力测量技术是优越的。但是,这是以降低空间分辨率为代价的。

著录项

  • 作者

    Pu, Anle.;

  • 作者单位

    University of Manitoba (Canada).;

  • 授予单位 University of Manitoba (Canada).;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 208 p.
  • 总页数 208
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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