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VLSI design comparison of multi-port SRAM versus multi-bank SRAM.

机译:多端口SRAM与多组SRAM的VLSI设计比较。

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摘要

Scope and Method of Study. The intent of the thesis is to determine if there is a tradeoff between implementing memory design techniques of multiple port versus multiple bank memory. I have designed twenty-one layouts to show the relationship and trade-offs that different memory techniques can provide for SRAM. The designs are created in Cadence Virtuoso Layout Editor. Results are extracted and tested with Cadence HSPICE, Synopsis Nanosim, and IRSIM. The technology library that is used in the thesis designs is AMI 0.60u C5N.;Findings and Conclusions. The delay performance and area of the multi-bank and multi-port memory are compared to each other in order to reveal trade offs between the two techniques. Multi-bank and multi-port reach an optimal equivalent trade off point at any port size with a memory area of 65536 which is about 256x256 in multi-port and 32x64x8banks in multi-bank.
机译:研究范围和方法。本文的目的是确定在实现多端口存储器设计技术与多存储体存储器设计技术之间是否需要权衡。我设计了21个布局,以显示不同存储器技术可以为SRAM提供的关系和权衡。这些设计在Cadence Virtuoso布局编辑器中创建。提取结果并使用Cadence HSPICE,Synopsis Nanosim和IRSIM进行测试。论文设计中使用的技术库是AMI 0.60u C5N 。;发现与结论。为了比较两种技术之间的折衷,将多存储体和多端口存储器的延迟性能和面积进行了比较。多库和多端口在任何端口大小下均达到最佳等效折衷点,内存区域为65536,在多端口中约256x256,在多库中约32x64x8。

著录项

  • 作者

    White, Benjamin Daniel.;

  • 作者单位

    Oklahoma State University.;

  • 授予单位 Oklahoma State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2008
  • 页码 58 p.
  • 总页数 58
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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