首页> 外文学位 >Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications.
【24h】

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications.

机译:面向高级应用的碳纳米管场发射器件的设计,制造和表征。

获取原文
获取原文并翻译 | 示例

摘要

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications.;The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications.;Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements.;Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.
机译:碳纳米管(CNT)最近已经成为集成FE设备中电子场发射(FE)阴极的有希望的候选者。这些纳米结构的碳材料具有出色的性能,并且可以完全控制其合成。近年来,它们已集成到高级电子设备中,不仅包括FE阴极,还包括传感器,能量存储设备和电路组件。此处提出的研究结果表明,CNT场发射器是几种先进应用中的下一代真空微电子学和相关电子发射器件的极佳候选者;该研究中提出的工作解决了目前限制MEMS的性能和应用的因素。 CNT-FE设备。为了实现这些目标,利用了表征研究和对CNT的FE特性的改进以及微机电系统(MEMS)的设计和制造。检查了重要的性能限制参数,包括发射器寿命和因基材附着不良而导致的故障。报告了CNT发射器与控制MEMS基板(即多晶硅)的兼容性和集成性,以及对这些性能限制参数的影响。研究了CNT的生长机理和动力学,并将其与硅(100)进行了比较,以改进基于CNT发射器集成MEMS的电子器件的设计,特别是在真空微电子器件(VMD)应用中;改进的生长允许用于新型冷阴极的设计和开发。利用CNT场发射器的FE设备。开发了基于CNT-FE电子源的化学电离(CI)源,并在商用台式质谱仪中对爆炸物痕量进行了评估。这项工作证明了首次报道使用能够收集CI质谱的CNT基离子源。当在压力不变的情况下以恒定排放模式运行时,CNT-FE离子源具有较低的功率要求,脉冲能力和超过320小时的平均寿命,而不会降低性能。此外,还开发并表征了使用CNT发射器,基于MEMS的Nier型几何结构以及具有集成离子光学器件的低温共烧陶瓷(LTCC)3D支架的新型微型质谱仪应用封装离子源。尽管先前的研究表明其他器件能够在芯片上收集离子电流,但这种LTCC封装的MEMS微离子源在能量和角度色散方面得到了改善,并且能够将离子引导出封装源并进入质量分析仪。通过仿真和实验设计,制造以及特性来进行这些改进。最后,开发了新型CNT-FE器件,以研究其在VMD电路中用作有源电路元件的潜力。尽管难于集成到微米级的器件阻碍了真空电子器件在集成电路中的使用,尽管它们在特定应用中具有独特的优势。结合粒子轨迹模拟和实验表征,研究了集成平台中的设备性能。详细地探讨了在紧密接近地操作多个装置和增强电子传输(即,减少栅极损耗)方面的困难的解决方案。采用了系统的迭代过程来开发隔离结构,从而将相邻设备之间的串扰从平均15%降低到几乎为零。创新的几何形状和新的运行模式将电网损失减少了近三倍,从而将发射到阴极的阴极电流传输率从初始设计的25%提高到平均70%。这些性能增强是大规模集成和实现复杂真空微电子电路的重要推动力。

著录项

  • 作者

    Radauscher, Erich Justin.;

  • 作者单位

    Duke University.;

  • 授予单位 Duke University.;
  • 学科 Electrical engineering.;Materials science.;Nanotechnology.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 254 p.
  • 总页数 254
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号