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Molecular-scale organic electronic devices for integrated nonvolatile memory application.

机译：用于集成非易失性存储器应用的分子级有机电子设备。

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摘要

Self-assembly techniques that allow the controlled growth of nanometer-scale organic molecular films present new opportunities to develop electronic devices with dimensions much smaller than those of current technologies. In this thesis we address several of the challenges to realizing this goal, and demonstrate a molecular-scale programmable-resistance memory device.; Although technologically attractive, field-effect transistors (FETs) with a self-assembled organic channel are difficult to realize due to the poor gate-channel coupling. We have used electrostatic modeling to determine guidelines that allow the maximum gate modulation of the channel potential in these devices.; Molecular-scale devices with integrated metal wiring are desirable for practical application. However, this typically requires the vacuum deposition of metal electrodes, which can damage the thin organic layer. We developed several approaches to fabricate two-terminal molecular-scale devices with vacuum-deposited metal electrodes and minimal defects in the organic layer. To demonstrate these device structures, we used films consisting of 1 to 12 self-assembled layers of 11-mercaptoundecanoic acid (MUA). The device structures that we developed included two large-area planar structures as well as a minimal-area structure that utilizes an insulating film to limit the device area to the edge of a metal layer. These structures allowed the first study of the mechanism of conduction in MUA films, which was characterized as Richardson-Schottky emission.; Finally, we found that these devices could be operated as a programmable memory by applying voltage pulses to increase or decrease the conductivity over a range of 103. The conductivity of the stored state could be read non-destructively with low-voltage pulses. Devices had remarkably large conductance (in the low-resistance state) of up to 106 S/cm2 at 1 V, programmed states remained stable for many months, and devices were functional for more than 104 programming cycles. The likely mechanism for the programmable resistance was the formation and destruction of conducting paths due to metal injected into the MUA film. We discuss their practical application and show that because of their high conductance these devices are uniquely promising among organic memories for use in dense, high-speed memory arrays, where large conductance is required to minimize resistance-capacitance delays.
机译：允许纳米级有机分子膜受控生长的自组装技术为开发尺寸远远小于当前技术的电子设备提供了新的机遇。在本文中，我们解决了实现该目标的若干挑战，并展示了一种分子级可编程电阻存储器件。尽管在技术上很有吸引力，但由于栅极-沟道耦合不良，很难实现具有自组装有机沟道的场效应晶体管（FET）。我们已经使用静电建模来确定准则，以允许在这些设备中最大程度地调制通道电势。具有集成金属布线的分子级装置对于实际应用是理想的。但是，这通常需要真空沉积金属电极，这会损坏薄有机层。我们开发了几种方法来制造具有真空沉积的金属电极且有机层中的缺陷最少的两端分子规模的器件。为了演示这些设备结构，我们使用了由1至12个11-巯基十一烷酸（MUA）的自组装层组成的薄膜。我们开发的器件结构包括两个大面积的平面结构以及一个最小面积的结构，该结构利用绝缘膜将器件面积限制在金属层的边缘。这些结构允许对MUA薄膜中的传导机理进行首次研究，其特征为Richardson-Schottky发射。最后，我们发现可以通过施加电压脉冲以在103范围内增加或减小电导率来将这些设备用作可编程存储器。通过低压脉冲可以无损地读取存储状态的电导率。器件在1 V时具有高达106 S / cm2的非常大的电导率（在低电阻状态下），编程状态可保持稳定数月，并且器件可运行104个以上的编程周期。可编程电阻的可能机制是由于金属注入MUA膜中而形成和破坏了导电路径。我们讨论了它们的实际应用，并表明由于它们的高电导率，这些器件在有机存储器中非常有前途，可用于高密度，高速存储阵列，在该阵列中需要大的电导率以最小化电阻电容的延迟。

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  • 作者

    Graves-Abe, Troy.;

  • 作者单位

    Princeton University.;

  • 授予单位 Princeton University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 241 p.
  • 总页数 241
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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