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Measurement and modeling of 1/f noise in MOSFET devices with high-kappa material as the gate dielectric.

机译：使用高κ材料作为栅极电介质的MOSFET器件中1 / f噪声的测量和建模。

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摘要

A new 1/f noise model has been developed for MOSFET devices with high-kappa gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-kappa dielectric was used. These devices were provided by Texas Instruments, having four different interfacial layer thicknesses with a stack composition of SiON/HfSiON.; The dominant mechanism affecting the noise behavior of these devices was experimentally determined to be correlated number and mobility fluctuation. The impact of remote phonon scattering was investigated in the temperature range of 172K to 300K. It has been observed that the mobility characteristics of these devices were significantly affected by remote phonon scattering. However, the impact of remote phonon scattering was not observed on the flicker noise characteristics. The new model was developed in the frame work of the original Unified Model incorporating two distinct features that distinguish high-kappa gate stacks from SiO2. The new model considers energy and spatial dependence of trap distribution in the dielectric, thus generates a more realistic trap profile. Furthermore, it incorporates the multi layered structure of the gate stack by considering tunneling of carriers through a double step cascaded barrier. The newly developed model is accordingly called MSUN (Multi Stack Unified Noise) Model, named after the original Unified Model.; MSUN Model has been successfully verified with data on MOSFETs having four different interfacial layer thicknesses, in the temperature range of 172K to 300K. The model predictions show very good agreement with data in the bias range of moderate to strong inversion. No specific impact due to nitridation was observed on these devices. The model has been successfully transformed into a compact form which is compatible with leading device simulation package used in the industry.
机译：针对具有高κ栅极堆叠的MOSFET器件，已经开发出一种新的1 / f噪声模型。为了研究氮化的影响，使用了具有氮化高κ电介质的MOSFET。这些器件由德州仪器（Texas Instruments）提供，具有四种不同的界面层厚度，且堆叠组成为SiON / HfSiON。通过实验确定影响这些设备噪声行为的主要机制是相关的数量和迁移率波动。在172K至300K的温度范围内研究了远程声子散射的影响。已经观察到，这些装置的迁移率特性受到远程声子散射的显着影响。但是，未观察到远程声子散射对闪烁噪声特性的影响。新模型是在原始统一模型的框架中开发的，该模型合并了两个独特的特征，这些特征将高kappa栅极堆叠与SiO2区分开。新模型考虑了电介质中陷阱分布的能量和空间依赖性，因此生成了更逼真的陷阱轮廓。此外，它通过考虑载流子通过双级联级势垒的隧穿而结合了栅堆叠的多层结构。因此，新开发的模型称为MSUN（多堆栈统一噪声）模型，以原始统一模型命名。 MSUN模型已成功通过MOSFET的数据进行了验证，该MOSFET在172K至300K的温度范围内具有四种不同的界面层厚度。模型预测表明，与中等至强反演偏差范围内的数据非常吻合。在这些设备上未观察到由于氮化引起的特定影响。该模型已成功转换为紧凑形式，与业界使用的领先设备仿真程序包兼容。

著录项

  • 作者

    Morshed, Tanvir Hasan.;

  • 作者单位

    The University of Texas at Arlington.$bElectrical Engineering.;

  • 授予单位 The University of Texas at Arlington.$bElectrical Engineering.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 163 p.
  • 总页数 163
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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