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首页> 外文学位 >Growth, characterization and device application of gallium nitride nanowires grown by MOCVD without catalyst.
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Growth, characterization and device application of gallium nitride nanowires grown by MOCVD without catalyst.

机译：在没有催化剂的情况下通过MOCVD生长的氮化镓纳米线的生长，表征和器件应用。

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摘要

Wide bandgap, III-nitride nanowires are of interest both for their individual quantum-confinement properties and also as ordered arrays, where for example, they can be used to form photonic crystals. GaN-based nanowire preparation is usually based on the vapor-liquid-solid (VLS) growth mechanism with the use of an additional metal catalyst that can also be a contaminant.; Two approaches are reported for the growth of vertically aligned GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using standard precursors and no additional catalyst. In both cases nanowires were grown selectively through a patterned silicon nitride growth mask that had been deposited on previously grown GaN/SiC, GaN/sapphire and GaN/Si(111) structures. The position, size and spacing of GaN nanowire array are precisely controlled by the growth mask. Our first approach is based on MOCVD growth using a thick SiNx mask, essentially this growth creates nanowires by confining the growth to within cylindrical holes inside the thick SiNx mask. We refer to this as the confined growth nanowire process. The second approach relies on a special pulsed MOCVD growth and will be referred to as the pulsed growth nanowire process. The growth mask was patterned by interferometric lithography (IL) and dry etching, to form a hexagonal array of open windows with a pitch ranged from 300 nm to 2 mum and a diameter ranged from 150 nm to 700 nm. These two types of nanowires were characterized thoroughly and preliminary device applications were also investigated.; In the first nanowire process MOCVD GaN was grown selectively through a thick (850 nm) silicon nitride growth mask. Growth was completely confined within the deep silicon nitride windows and this forced the GaN growth to adopt a columnar form until it emerged from the growth mask. The base of these GaN nanowires was cylindrical with no faceting, while their tip showed the typically observed facetted, hexagonal pyramid form bounded by {lcub}1 101{rcub} facets.; The second GaN nanowire process uses a thin (30 nm), patterned silicon nitride growth mask. Ordered arrays of uniform GaN nanowires were achieved by using a low V/III ratio during MOCVD growth. The GaN nanowires in this case exhibited a stable, hexagonal cross-section, which was bounded by vertical {lcub}1101{rcub} facets, and this cross-section remained unchanged for longer or shorter growth times. Nanowires over 20 pm long with a diameter of 200 mil were achieved at a vertical growth rate of 2.4 mum /hr.; We believe this is the first time that ordered arrays of uniform GaN nanowires have been grown without the help of catalysts and these GaN-based nanowires show great potential for optoelectronic applications.
机译：宽带隙的III族氮化物纳米线不仅因其各自的量子约束特性而且还作为有序阵列而受到关注，例如，它们可用于形成光子晶体。 GaN基纳米线的制备通常基于气液固（VLS）生长机理，并使用可能也是污染物的其他金属催化剂。报道了两种使用标准前体通过金属有机化学气相沉积（MOCVD）生长垂直排列的GaN纳米线阵列的方法，无需使用其他催化剂。在这两种情况下，纳米线都通过已沉积在先前生长的GaN / SiC，GaN /蓝宝石和GaN / Si（111）结构上的图案化氮化硅生长掩模选择性生长。 GaN纳米线阵列的位置，大小和间距由生长掩模精确控制。我们的第一种方法是基于使用厚SiNx掩模的MOCVD生长，本质上，这种生长通过将生长限制在厚SiNx掩模内部的圆柱孔内而产生纳米线。我们将其称为受限生长纳米线工艺。第二种方法依赖于特殊的脉冲MOCVD生长，并将其称为脉冲生长纳米线工艺。通过干涉平版印刷术（IL）和干法蚀刻对生长掩模进行图案化，以形成间距为300nm至2μm，直径范围为150nm至700nm的开口窗口的六边形阵列。对这两种类型的纳米线进行了全面表征，并研究了初步的器件应用。在第一个纳米线工艺中，通过厚（850 nm）的氮化硅生长掩模选择性地生长MOCVD GaN。生长完全限制在深氮化硅窗口内，这迫使GaN生长采取柱状形式，直到它从生长掩模中露出来为止。这些GaN纳米线的基底是没有刻面的圆柱形，而其尖端则显示出通常观察到的刻有{lcub} 110 {rcub}刻面的六面金字塔形。第二个GaN纳米线工艺使用薄的（30 nm）图案化氮化硅生长掩模。通过在MOCVD生长期间使用低的V / III比，可以获得均匀的GaN纳米线的有序阵列。在这种情况下，GaN纳米线表现出稳定的六边形横截面，该横截面由垂直的{lcub} 1101 {rcub}面界定，并且该横截面对于更长或更短的生长时间保持不变。以2.4mum / hr的垂直生长速率获得了长度超过20pm，直径为200mil的纳米线。我们认为，这是有序的均匀GaN纳米线的有序阵列在没有催化剂帮助的情况下首次生长，并且这些基于GaN的纳米线在光电应用中显示出巨大的潜力。

著录项

  • 作者

    Wang, Xin.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 155 p.
  • 总页数 155
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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